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5962-01-021-0349
20 Products
RC4195TK
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010210349
NSN
5962-01-021-0349
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -30.0 VOLTS MINIMUM POWER SOURCE AND 30.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ZD430E20
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210851
NSN
5962-01-021-0851
MFG
SYMMETRICOM INCS ANALOG SOLUTIONS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 7
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
BODY LENGTH: 0.868 INCHES MINIMUM AND 0.878 INCHES MAXIMUM
BODY WIDTH: 0.496 INCHES MINIMUM AND 0.506 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT
III END ITEM IDENTIFICATION: AN/WRN-5(V)1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS NOMINAL POWER SOURCE
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9094DM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210854
NSN
5962-01-021-0854
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ASYNCHRONOUS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932390 DRAWING
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
932390-1B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210854
NSN
5962-01-021-0854
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ASYNCHRONOUS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932390 DRAWING
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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HL53813
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210854
NSN
5962-01-021-0854
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ASYNCHRONOUS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932390 DRAWING
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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SC26067LH-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210854
NSN
5962-01-021-0854
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ASYNCHRONOUS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932390 DRAWING
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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932036-1B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210856
NSN
5962-01-021-0856
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 426
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXTERNALLY COMPENSATED AND SYNCHRONOUS AND W/STROBE
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.6 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 82577-932036 DRAWING
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIM
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210856
NSN
5962-01-021-0856
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 426
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXTERNALLY COMPENSATED AND SYNCHRONOUS AND W/STROBE
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.6 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 82577-932036 DRAWING
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIM
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210856
NSN
5962-01-021-0856
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC POCATELLO ID MANUFACTURING FACILITY DBA ON SEMICONDUCTOR
Description
(NON-CORE DATA) BIT QUANTITY: 426
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXTERNALLY COMPENSATED AND SYNCHRONOUS AND W/STROBE
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.6 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 82577-932036 DRAWING
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIM
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210856
NSN
5962-01-021-0856
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) BIT QUANTITY: 426
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXTERNALLY COMPENSATED AND SYNCHRONOUS AND W/STROBE
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.6 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 82577-932036 DRAWING
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIM
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7468-1B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010210857
NSN
5962-01-021-0857
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG AND 1 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND W/FIELD EFFECT TRANSISTOR SWITCH AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932381 DRAWING
TIME RATING PER CHACTERISTIC: 0.30 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 3
Related Searches:
932381-1B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010210857
NSN
5962-01-021-0857
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG AND 1 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND W/FIELD EFFECT TRANSISTOR SWITCH AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932381 DRAWING
TIME RATING PER CHACTERISTIC: 0.30 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 3
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010210857
NSN
5962-01-021-0857
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG AND 1 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND W/FIELD EFFECT TRANSISTOR SWITCH AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932381 DRAWING
TIME RATING PER CHACTERISTIC: 0.30 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 3
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010210857
NSN
5962-01-021-0857
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG AND 1 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND W/FIELD EFFECT TRANSISTOR SWITCH AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 65.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932381 DRAWING
TIME RATING PER CHACTERISTIC: 0.30 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 3
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932389-2B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210859
NSN
5962-01-021-0859
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 932389-2B
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND RESETTABLE AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MANUFACTURERS CODE: 82577
MAXIMUM POWER DISSIPATION RATING: 236.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932389 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210859
NSN
5962-01-021-0859
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 932389-2B
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND RESETTABLE AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MANUFACTURERS CODE: 82577
MAXIMUM POWER DISSIPATION RATING: 236.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932389 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210859
NSN
5962-01-021-0859
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 932389-2B
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND RESETTABLE AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MANUFACTURERS CODE: 82577
MAXIMUM POWER DISSIPATION RATING: 236.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932389 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010210859
NSN
5962-01-021-0859
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 932389-2B
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND RESETTABLE AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MANUFACTURERS CODE: 82577
MAXIMUM POWER DISSIPATION RATING: 236.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932389 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010211279
NSN
5962-01-021-1279
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 8
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/15001BFA
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 485.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/150
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/150 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150
Related Searches:
5962-3815001BFA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010211279
NSN
5962-01-021-1279
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 8
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/15001BFA
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 485.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/150
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/150 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150
