My Quote Request
5962-01-026-1546
20 Products
911269-14
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261546
NSN
5962-01-026-1546
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: MONOLITHIC AND EXPANDABLE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 285.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010260499
NSN
5962-01-026-0499
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND W/ENABLE AND LOW POWER AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.0 VOLTS MINIMUM POWER SOURCE AND 5.25 VOLTS MAXIMUM POWER SOURCE
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M0S2102&16PIN
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010260499
NSN
5962-01-026-0499
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND W/ENABLE AND LOW POWER AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.0 VOLTS MINIMUM POWER SOURCE AND 5.25 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261043
NSN
5962-01-026-1043
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND SCHOTTKY
III END ITEM IDENTIFICATION: HATS-AUTO TEST SET FSCM 12436
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261392
NSN
5962-01-026-1392
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/CLEAR AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MANUFACTURERS CODE: 97942
MFR SOURCE CONTROLLING REFERENCE: 649A879H01
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261392
NSN
5962-01-026-1392
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/CLEAR AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MANUFACTURERS CODE: 97942
MFR SOURCE CONTROLLING REFERENCE: 649A879H01
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261392
NSN
5962-01-026-1392
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/CLEAR AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MANUFACTURERS CODE: 97942
MFR SOURCE CONTROLLING REFERENCE: 649A879H01
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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SD722272
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261392
NSN
5962-01-026-1392
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/CLEAR AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MANUFACTURERS CODE: 97942
MFR SOURCE CONTROLLING REFERENCE: 649A879H01
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261392
NSN
5962-01-026-1392
MFG
TEXAS INSTRUMENTS INC INFORMATION TECHNOLOGY GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/CLEAR AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MANUFACTURERS CODE: 97942
MFR SOURCE CONTROLLING REFERENCE: 649A879H01
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261392
NSN
5962-01-026-1392
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/CLEAR AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
MANUFACTURERS CODE: 97942
MFR SOURCE CONTROLLING REFERENCE: 649A879H01
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261394
NSN
5962-01-026-1394
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261394
NSN
5962-01-026-1394
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261394
NSN
5962-01-026-1394
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010261394
NSN
5962-01-026-1394
MFG
TEXAS INSTRUMENTS INC INFORMATION TECHNOLOGY GROUP
Description
BODY HEIGHT: 0.365 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010261395
NSN
5962-01-026-1395
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/STROBE AND MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR TIN
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 36.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010261395
NSN
5962-01-026-1395
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/STROBE AND MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR TIN
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 36.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010261395
NSN
5962-01-026-1395
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/STROBE AND MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR TIN
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 36.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010261545
NSN
5962-01-026-1545
MFG
THALES VORM THOMSON-CSF ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SLEW RATE AND HIGH VOLTAGE AND INTERNALLY COMPENSATED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010261545
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5962-01-026-1545
MFG
SELEX GALILEO LTD
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SLEW RATE AND HIGH VOLTAGE AND INTERNALLY COMPENSATED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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NSN, MFG P/N
5962010261545
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5962-01-026-1545
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NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-5 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SLEW RATE AND HIGH VOLTAGE AND INTERNALLY COMPENSATED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN