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5961-00-945-0418
20 Products
0A10
DIODE
NSN, MFG P/N
5961009450418
NSN
5961-00-945-0418
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
DIODE
Related Searches:
0C200
TRANSISTOR
NSN, MFG P/N
5961009450413
NSN
5961-00-945-0413
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
TRANSISTOR
Related Searches:
0C203
TRANSISTOR
NSN, MFG P/N
5961009450414
NSN
5961-00-945-0414
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
TRANSISTOR
Related Searches:
ACY17
TRANSISTOR
NSN, MFG P/N
5961009450415
NSN
5961-00-945-0415
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
TRANSISTOR
Related Searches:
0C28
TRANSISTOR
NSN, MFG P/N
5961009450416
NSN
5961-00-945-0416
MFG
VISHAY
Description
TRANSISTOR
Related Searches:
0C28-2N1666
TRANSISTOR
NSN, MFG P/N
5961009450416
NSN
5961-00-945-0416
MFG
CALVERT ELECTRONICS INC
Description
TRANSISTOR
Related Searches:
C117709-1
TRANSISTOR
NSN, MFG P/N
5961009450416
NSN
5961-00-945-0416
MFG
THALES UK LIMITED, AEROSPACE DIVISION
Description
TRANSISTOR
Related Searches:
GET113
TRANSISTOR
NSN, MFG P/N
5961009450417
NSN
5961-00-945-0417
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
TRANSISTOR
Related Searches:
0AZ205
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009450438
NSN
5961-00-945-0438
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0C83
TRANSISTOR
NSN, MFG P/N
5961009450439
NSN
5961-00-945-0439
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
TRANSISTOR
Related Searches:
4JX11B2009
TRANSISTOR
NSN, MFG P/N
5961009450996
NSN
5961-00-945-0996
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 99971-7637422 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
7637422P1
TRANSISTOR
NSN, MFG P/N
5961009450996
NSN
5961-00-945-0996
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 99971-7637422 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SM9115
TRANSISTOR
NSN, MFG P/N
5961009450996
NSN
5961-00-945-0996
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 99971-7637422 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
926C188-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009451070
NSN
5961-00-945-1070
MFG
BAE SYSTEMS CONTROLS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
HP482
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009451070
NSN
5961-00-945-1070
MFG
GENERAL SEMICONDUCTOR INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.070 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
133-599
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009451102
NSN
5961-00-945-1102
MFG
BLAW-KNOX CONSTRUCTION EQUIPMENT CO DIV OF WHITE CONSOLIDATED INDUSTRIES INC
Description
DESIGN CONTROL REFERENCE: G100B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14936
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
AED33437-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009451102
NSN
5961-00-945-1102
AED33437-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009451102
NSN
5961-00-945-1102
MFG
HONEYWELL AEROSPATIALE INC
Description
DESIGN CONTROL REFERENCE: G100B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14936
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
G100B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961009451102
NSN
5961-00-945-1102
MFG
GENERAL SEMICONDUCTOR INC
Description
DESIGN CONTROL REFERENCE: G100B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 14936
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
209003P2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009451610
NSN
5961-00-945-1610
209003P2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009451610
NSN
5961-00-945-1610
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
DESIGN CONTROL REFERENCE: 209003P2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94117
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
SD2853
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009451610
NSN
5961-00-945-1610
SD2853
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961009451610
NSN
5961-00-945-1610
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
DESIGN CONTROL REFERENCE: 209003P2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94117
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL SEMICONDUCTOR DEVICE DIODE
