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5962-01-432-8565
20 Products
RPT-82FQ
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014328565
NSN
5962-01-432-8565
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: 6625-01-400-1735
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: REPEATER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
Related Searches:
77C953325P27
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014328552
NSN
5962-01-432-8552
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III END ITEM IDENTIFICATION: PANEL CONTROL (AN/BSY-2(V)
SPECIAL FEATURES: RESCREENED HYBRID FOT THR BSY-2
Related Searches:
77C953325P21
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014328553
NSN
5962-01-432-8553
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III END ITEM IDENTIFICATION: AN/BSY-2(V) S
SPECIAL FEATURES: RECREENED HYBRID FOR THE BSY-2
Related Searches:
77C955905P1
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014328553
NSN
5962-01-432-8553
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III END ITEM IDENTIFICATION: AN/BSY-2(V) S
SPECIAL FEATURES: RECREENED HYBRID FOR THE BSY-2
Related Searches:
77C953325P16
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014328554
NSN
5962-01-432-8554
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III END ITEM IDENTIFICATION: AN/BSY-2(V) S
SPECIAL FEATURES: RESCREENED HYBRID FOR THE BSY-2
Related Searches:
77C953338P1
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014328554
NSN
5962-01-432-8554
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
III END ITEM IDENTIFICATION: AN/BSY-2(V) S
SPECIAL FEATURES: RESCREENED HYBRID FOR THE BSY-2
Related Searches:
27C128V15AX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328555
NSN
5962-01-432-8555
MFG
ATMEL CORPORATION
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: TSSR
MEMORY DEVICE TYPE: EPROM
Related Searches:
52125-56
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328555
NSN
5962-01-432-8555
MFG
VISLINK INC. DIV MICROWAVE RADIO COMMUNICATIONS
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: TSSR
MEMORY DEVICE TYPE: EPROM
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328555
NSN
5962-01-432-8555
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: TSSR
MEMORY DEVICE TYPE: EPROM
Related Searches:
1657013-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014328556
NSN
5962-01-432-8556
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
CF98312
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014328556
NSN
5962-01-432-8556
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
414583
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014328562
NSN
5962-01-432-8562
MFG
TARGET CORPORATION DBA TARGET
Description
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
23-000335
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014328565
NSN
5962-01-432-8565
MFG
ACTERNA LLC DBA JDSU
Description
III END ITEM IDENTIFICATION: 6625-01-400-1735
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: REPEATER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
Related Searches:
3119537-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328566
NSN
5962-01-432-8566
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: C10661B/AAS38 E/I FSCM 09205
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: MADE FROM SMD 5962-8863402YA
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328566
NSN
5962-01-432-8566
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: C10661B/AAS38 E/I FSCM 09205
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: MADE FROM SMD 5962-8863402YA
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT
Related Searches:
3119537-3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328567
NSN
5962-01-432-8567
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: C10661B/AAS38 E/I FSCM 09205
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: MADE FROM SMD 5962-8863402YA
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328567
NSN
5962-01-432-8567
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: C10661B/AAS38 E/I FSCM 09205
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: MADE FROM SMD 5962-8863402YA
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT
Related Searches:
3119537-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328568
NSN
5962-01-432-8568
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: C10661B/AAS38 E/I FSCM 09205
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: MADE FROM SMD 5962-8863402YA
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328568
NSN
5962-01-432-8568
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE AND BURN IN
III END ITEM IDENTIFICATION: C10661B/AAS38 E/I FSCM 09205
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: MADE FROM SMD 5962-8863402YA
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM INPUT AND 6.25 VOLTS MAXIMUM INPUT
Related Searches:
1908AS144
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014328569
NSN
5962-01-432-8569
MFG
NAVAL AIR SYSTEMS COMMAND
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: PENGUIN LAUNCH
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: EPROM
