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5961-01-303-8017

20 Products

MA-4L011-30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038017

NSN

5961-01-303-8017

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MA-4L011-30

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038017

NSN

5961-01-303-8017

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

2112-21123-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038017

NSN

5961-01-303-8017

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2112-21123-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038017

NSN

5961-01-303-8017

MFG

TADIRAN LTD

23-00189-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038017

NSN

5961-01-303-8017

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23-00189-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038017

NSN

5961-01-303-8017

MFG

HAMILTON STANDARD ELECTRONICS SYSTEMS INC TELE-DYNAMICS DIV

019-006003-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

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019-006003-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: AIRCRAFT, EAGLE F-15
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COMMON ANODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-019-006003 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

CSH-231-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

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CSH-231-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

MFG

LEACH INTERNATIONAL CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: AIRCRAFT, EAGLE F-15
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COMMON ANODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-019-006003 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

SMC50626

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

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SMC50626

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: AIRCRAFT, EAGLE F-15
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COMMON ANODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-019-006003 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

USD245CRHR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

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USD245CRHR

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

MFG

MICRO USPD INC

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: AIRCRAFT, EAGLE F-15
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COMMON ANODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-019-006003 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

USD245CRHR2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

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USD245CRHR2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013038051

NSN

5961-01-303-8051

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 80.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: AIRCRAFT, EAGLE F-15
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COMMON ANODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 26916-019-006003 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

019-006115-001

TRANSISTOR

NSN, MFG P/N

5961013038123

NSN

5961-01-303-8123

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019-006115-001

TRANSISTOR

NSN, MFG P/N

5961013038123

NSN

5961-01-303-8123

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ALQ-135 COUNTERMEASURE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.326 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.7 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FOR MAXIMUM DIMENSIONS
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

JANTX2N3716

TRANSISTOR

NSN, MFG P/N

5961013038123

NSN

5961-01-303-8123

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JANTX2N3716

TRANSISTOR

NSN, MFG P/N

5961013038123

NSN

5961-01-303-8123

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 4.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ALQ-135 COUNTERMEASURE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.326 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.7 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FOR MAXIMUM DIMENSIONS
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

200040

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013038708

NSN

5961-01-303-8708

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200040

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013038708

NSN

5961-01-303-8708

MFG

PRIME-MOVER CO THE

44A717067-001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013038708

NSN

5961-01-303-8708

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44A717067-001

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013038708

NSN

5961-01-303-8708

MFG

GENERAL ELECTRIC CO GENERAL PURPOSE CONTROL DEPT MEBANE OPNS

82-2219

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013038708

NSN

5961-01-303-8708

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82-2219

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961013038708

NSN

5961-01-303-8708

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

T3220

TRANSISTOR

NSN, MFG P/N

5961013039283

NSN

5961-01-303-9283

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T3220

TRANSISTOR

NSN, MFG P/N

5961013039283

NSN

5961-01-303-9283

MFG

MICROTRAN CO INC

1.5KE200

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013039910

NSN

5961-01-303-9910

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1.5KE200

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013039910

NSN

5961-01-303-9910

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS

1N6303

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013039910

NSN

5961-01-303-9910

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1N6303

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013039910

NSN

5961-01-303-9910

MFG

GENERAL SEMICONDUCTOR INDUSTRIES INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS

2223113-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013039910

NSN

5961-01-303-9910

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2223113-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013039910

NSN

5961-01-303-9910

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS

1N3993RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013040421

NSN

5961-01-304-0421

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1N3993RA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013040421

NSN

5961-01-304-0421

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 1N3993RA
FEATURES PROVIDED: REVERSE POLARITY
MANUFACTURERS CODE: 81349
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.313 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/272
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/272 GOVERNMENT SPECIFICATION
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF

1N4002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013041271

NSN

5961-01-304-1271

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1N4002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013041271

NSN

5961-01-304-1271

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

233409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013041271

NSN

5961-01-304-1271

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233409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013041271

NSN

5961-01-304-1271

MFG

KOHLER CO .