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5962-01-122-8292

20 Products

SG99482003J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

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SG99482003J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, DARLINGTON TRANSISTOR
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -30.0 VOLTS NOMINAL POWER SOURCE

LC64007E1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011227921

NSN

5962-01-122-7921

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LC64007E1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011227921

NSN

5962-01-122-7921

MFG

LANSDALE SEMICONDUCTOR INC .

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7109005-001
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:

MC8224BEBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011227921

NSN

5962-01-122-7921

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MC8224BEBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011227921

NSN

5962-01-122-7921

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 93322
MFR SOURCE CONTROLLING REFERENCE: 7109005-001
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:

308708-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228018

NSN

5962-01-122-8018

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308708-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228018

NSN

5962-01-122-8018

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 15786-308708 DRAWING
TIME RATING PER CHACTERISTIC: 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

S54S151F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228018

NSN

5962-01-122-8018

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S54S151F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228018

NSN

5962-01-122-8018

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 15786-308708 DRAWING
TIME RATING PER CHACTERISTIC: 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN54S151J-B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228018

NSN

5962-01-122-8018

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SN54S151J-B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228018

NSN

5962-01-122-8018

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 15786-308708 DRAWING
TIME RATING PER CHACTERISTIC: 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNC54H151J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228018

NSN

5962-01-122-8018

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SNC54H151J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228018

NSN

5962-01-122-8018

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 15786-308708 DRAWING
TIME RATING PER CHACTERISTIC: 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

23-00366-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

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23-00366-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

MFG

HAMILTON STANDARD ELECTRONICS SYSTEMS INC TELE-DYNAMICS DIV

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, DARLINGTON TRANSISTOR
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -30.0 VOLTS NOMINAL POWER SOURCE

6010244-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

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6010244-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, DARLINGTON TRANSISTOR
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -30.0 VOLTS NOMINAL POWER SOURCE

60710876-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

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60710876-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, DARLINGTON TRANSISTOR
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -30.0 VOLTS NOMINAL POWER SOURCE

77A103100P001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

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77A103100P001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, DARLINGTON TRANSISTOR
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -30.0 VOLTS NOMINAL POWER SOURCE

SG2003J-09948

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

View More Info

SG2003J-09948

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, DARLINGTON TRANSISTOR
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -30.0 VOLTS NOMINAL POWER SOURCE

SG2003J/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

View More Info

SG2003J/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011228292

NSN

5962-01-122-8292

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, DARLINGTON TRANSISTOR
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -30.0 VOLTS NOMINAL POWER SOURCE

157420-03

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228293

NSN

5962-01-122-8293

View More Info

157420-03

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228293

NSN

5962-01-122-8293

MFG

GE AVIATION SYSTEMS LLC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/OPEN COLLECTOR AND HIGH VOLTAGE
III END ITEM IDENTIFICATION: 4920-01-088-1061 35351
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 35351-157420 DRAWING
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

163384-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228293

NSN

5962-01-122-8293

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163384-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228293

NSN

5962-01-122-8293

MFG

GE AVIATION SYSTEMS LLC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/OPEN COLLECTOR AND HIGH VOLTAGE
III END ITEM IDENTIFICATION: 4920-01-088-1061 35351
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 35351-157420 DRAWING
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

HL59832

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228293

NSN

5962-01-122-8293

View More Info

HL59832

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011228293

NSN

5962-01-122-8293

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/OPEN COLLECTOR AND HIGH VOLTAGE
III END ITEM IDENTIFICATION: 4920-01-088-1061 35351
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 35351-157420 DRAWING
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

4703BDCQR

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011228294

NSN

5962-01-122-8294

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4703BDCQR

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011228294

NSN

5962-01-122-8294

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MAXIMUM
BODY WIDTH: 0.380 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND ASYNCHRONOUS AND EXPANDABLE AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT
III END ITEM IDENTIFICATION: PL-1413/FCC 57655
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

348024-307

PROGRAM MEMORY

NSN, MFG P/N

5962011228780

NSN

5962-01-122-8780

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348024-307

PROGRAM MEMORY

NSN, MFG P/N

5962011228780

NSN

5962-01-122-8780

MFG

RAYTHEON COMPANY

165-1351-0

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962011228835

NSN

5962-01-122-8835

View More Info

165-1351-0

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962011228835

NSN

5962-01-122-8835

MFG

BI TECHNOLOGIES CORPORATION

614798-1-1

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962011228835

NSN

5962-01-122-8835

View More Info

614798-1-1

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962011228835

NSN

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