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5961-01-314-1227
20 Products
41-002-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013141227
NSN
5961-01-314-1227
41-002-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013141227
NSN
5961-01-314-1227
MFG
PACE MEDICAL INC
Description
DESIGN CONTROL REFERENCE: 41-002-000
III END ITEM IDENTIFICATION: 6515-01-310-1687
MANUFACTURERS CODE: 0CWX7
SPECIAL FEATURES: FOR USE ON CARDIAC PACEMAKER,MDL EC4542G
THE MANUFACTURERS DATA:
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RGP30M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013136412
NSN
5961-01-313-6412
MFG
GENERAL SEMICONDUCTOR INC
Description
CAPACITANCE RATING IN PICOFARADS: 60.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 125.00 AMPERES NOMINAL PEAK FORWARD SURGE CURRENT AND 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC AND GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-201AD
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.285 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.048 INCHES MINIMUM AND 0.062 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
40682
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013136413
NSN
5961-01-313-6413
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES NOMINAL ON-STATE CURRENT, RMS TOTAL AND 22.00 AMPERES NOMINAL ON-STATE CURRENT, AVERAGE AND 25.00 MILLIAMPERES NOMINAL GATE TRIGGER CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.125 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.551 INCHES MINIMUM AND 0.557 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION AND 0.5 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 660.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED AND 400.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED AND 1.1 NOMINAL GATE TRIGGER VOLTAGE, DC
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05061-8013
TRANSISTOR
NSN, MFG P/N
5961013136570
NSN
5961-01-313-6570
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-8
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.600 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.282 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC
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151-0443-02
TRANSISTOR
NSN, MFG P/N
5961013136571
NSN
5961-01-313-6571
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
151-0276-01
TRANSISTOR
NSN, MFG P/N
5961013137187
NSN
5961-01-313-7187
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
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SPS8025
TRANSISTOR
NSN, MFG P/N
5961013137187
NSN
5961-01-313-7187
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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152-0867-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013138009
NSN
5961-01-313-8009
152-0867-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013138009
NSN
5961-01-313-8009
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
89300436
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013138009
NSN
5961-01-313-8009
89300436
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013138009
NSN
5961-01-313-8009
MFG
THALES AIR DEFENCE
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
SBN1630T-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013138009
NSN
5961-01-313-8009
SBN1630T-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013138009
NSN
5961-01-313-8009
MFG
GENERAL SEMICONDUCTOR INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
153-0067-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013139429
NSN
5961-01-313-9429
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
08707
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013139825
NSN
5961-01-313-9825
MFG
THALES COMMUNICATIONS INC.
Description
MATERIAL: ALUMINUM ALLOY 5052
MOUNTING FACILITY TYPE AND QUANTITY: 1 SLOT SINGLE MOUNTING FACILITY
MOUNTING SLOT LENGTH: 0.187 INCHES NOMINAL SINGLE MOUNTING FACILITY
MOUNTING SLOT WIDTH: 0.125 INCHES NOMINAL SINGLE MOUNTING FACILITY
OVERALL DIAMETER: 0.062 INCHES NOMINAL
OVERALL LENGTH: 0.650 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
STYLE DESIGNATOR: 7C L-SHAPE
SURFACE TREATMENT: CHROMATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-C-5541 MIL SPEC SINGLE TREATMENT RESPONSE
Related Searches:
152-0608-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013140642
NSN
5961-01-314-0642
152-0608-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013140642
NSN
5961-01-314-0642
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
FLS011
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013141326
NSN
5961-01-314-1326
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
NE41612
TRANSISTOR
NSN, MFG P/N
5961013141538
NSN
5961-01-314-1538
MFG
CALIFORNIA EASTERN LABS
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 5.84 MILLIMETERS MAXIMUM
OVERALL LENGTH: 5.33 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 12.50 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 18.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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PN918
TRANSISTOR
NSN, MFG P/N
5961013141539
NSN
5961-01-314-1539
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 3.0 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 1.0 NOMINAL COLLECTOR-TO-EMITTER OFFSET VOLTAGE
Related Searches:
71010668001
TRANSISTOR
NSN, MFG P/N
5961013141540
NSN
5961-01-314-1540
MFG
KOLLSMAN INC.
Description
TRANSISTOR
Related Searches:
2N1481
TRANSISTOR
NSN, MFG P/N
5961013141541
NSN
5961-01-314-1541
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
TRANSISTOR
Related Searches:
71010669001
TRANSISTOR
NSN, MFG P/N
5961013141541
NSN
5961-01-314-1541
MFG
KOLLSMAN INC.
Description
TRANSISTOR
Related Searches:
BZX-85-C6V8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013141542
NSN
5961-01-314-1542
BZX-85-C6V8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013141542
NSN
5961-01-314-1542
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
