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5961-00-553-6177

20 Products

5082-1995

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536177

NSN

5961-00-553-6177

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5082-1995

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536177

NSN

5961-00-553-6177

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL HEIGHT: 0.030 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE

232-1127P3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536071

NSN

5961-00-553-6071

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232-1127P3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536071

NSN

5961-00-553-6071

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.385 INCHES MAXIMUM
OVERALL LENGTH: 0.368 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

TM43

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536071

NSN

5961-00-553-6071

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TM43

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536071

NSN

5961-00-553-6071

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.385 INCHES MAXIMUM
OVERALL LENGTH: 0.368 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK

TM11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536073

NSN

5961-00-553-6073

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TM11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536073

NSN

5961-00-553-6073

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: TM11
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 03877
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

578R623H01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005536080

NSN

5961-00-553-6080

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578R623H01

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005536080

NSN

5961-00-553-6080

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 200.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.770 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE

SA3778

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005536080

NSN

5961-00-553-6080

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SA3778

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005536080

NSN

5961-00-553-6080

MFG

SEMTECH CORPORATION

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 200.0 REVERSE VOLTAGE, INSTANTANEOUS
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.770 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE

42-004352-02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536123

NSN

5961-00-553-6123

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42-004352-02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536123

NSN

5961-00-553-6123

MFG

INTERLINK COMMUNICATIONS INC

Description

DESIGN CONTROL REFERENCE: 42-004352-02
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 30890
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.126 INCHES MAXIMUM
OVERALL HEIGHT: 0.052 INCHES MINIMUM AND 0.071 INCHES MAXIMUM
THE MANUFACTURERS DATA:

42-003345-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536177

NSN

5961-00-553-6177

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42-003345-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536177

NSN

5961-00-553-6177

MFG

INTERLINK COMMUNICATIONS INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL HEIGHT: 0.030 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE

7434802P1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961005536319

NSN

5961-00-553-6319

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7434802P1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961005536319

NSN

5961-00-553-6319

MFG

GENERAL ELECTRIC CO

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: MQ4518
MANUFACTURERS CODE: 82577
SPECIAL FEATURES: HUGHES AIRCRAFT CO. CONTROLLING AGENCY; COMPONENT PART NO. HD6006
THE MANUFACTURERS DATA:

MQ4518

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961005536319

NSN

5961-00-553-6319

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MQ4518

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961005536319

NSN

5961-00-553-6319

MFG

RAYTHEON COMPANY

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: MQ4518
MANUFACTURERS CODE: 82577
SPECIAL FEATURES: HUGHES AIRCRAFT CO. CONTROLLING AGENCY; COMPONENT PART NO. HD6006
THE MANUFACTURERS DATA:

130-9-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536320

NSN

5961-00-553-6320

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130-9-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536320

NSN

5961-00-553-6320

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

1778852

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536320

NSN

5961-00-553-6320

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1778852

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536320

NSN

5961-00-553-6320

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

650C0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536320

NSN

5961-00-553-6320

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650C0

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536320

NSN

5961-00-553-6320

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.2 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N343

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536480

NSN

5961-00-553-6480

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1N343

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536480

NSN

5961-00-553-6480

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

DESIGN CONTROL REFERENCE: 8185697
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

8185697

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536480

NSN

5961-00-553-6480

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8185697

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536480

NSN

5961-00-553-6480

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

DESIGN CONTROL REFERENCE: 8185697
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

1N208

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536568

NSN

5961-00-553-6568

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1N208

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536568

NSN

5961-00-553-6568

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1348 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM REVERSE VOLTAGE, PEAK

48C873039

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536568

NSN

5961-00-553-6568

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48C873039

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536568

NSN

5961-00-553-6568

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1348 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM REVERSE VOLTAGE, PEAK

8199422

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536568

NSN

5961-00-553-6568

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8199422

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536568

NSN

5961-00-553-6568

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1348 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N459

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536569

NSN

5961-00-553-6569

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1N459

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536569

NSN

5961-00-553-6569

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N459 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

222611

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536569

NSN

5961-00-553-6569

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222611

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005536569

NSN

5961-00-553-6569

MFG

RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N459 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD