My Quote Request
No products added yet
5961-00-420-3668
20 Products
048826-0002
TRANSISTOR
NSN, MFG P/N
5961004203668
NSN
5961-00-420-3668
MFG
THALES ATM INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2369A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/317
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES M
Related Searches:
13-805334-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203438
NSN
5961-00-420-3438
13-805334-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203438
NSN
5961-00-420-3438
MFG
GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.095 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
D4121
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203438
NSN
5961-00-420-3438
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.095 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.6 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
13-805350-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203441
NSN
5961-00-420-3441
13-805350-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203441
NSN
5961-00-420-3441
MFG
GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
DESIGN CONTROL REFERENCE: 13-805350-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07397
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
PC114B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203441
NSN
5961-00-420-3441
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: 13-805350-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07397
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
VA114B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203441
NSN
5961-00-420-3441
MFG
CRYSTALONICS INC.
Description
DESIGN CONTROL REFERENCE: 13-805350-2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 07397
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
13-807070-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203445
NSN
5961-00-420-3445
13-807070-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203445
NSN
5961-00-420-3445
MFG
GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.121 INCHES NOMINAL
OVERALL LENGTH: 0.089 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
D5587
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203445
NSN
5961-00-420-3445
MFG
SKYWORKS SOLUTIONS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 0.121 INCHES NOMINAL
OVERALL LENGTH: 0.089 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FERRULE
Related Searches:
02068
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203535
NSN
5961-00-420-3535
MFG
DRS SIGNAL SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 60.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N951
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203535
NSN
5961-00-420-3535
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 60.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
13-805821
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203564
NSN
5961-00-420-3564
MFG
GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3943 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.130 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
15939
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203564
NSN
5961-00-420-3564
MFG
VIBRO-METER INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3943 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.130 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N3870
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203564
NSN
5961-00-420-3564
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3943 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.130 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MPR15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203564
NSN
5961-00-420-3564
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.320 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3943 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.130 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
13-805816-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203565
NSN
5961-00-420-3565
13-805816-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203565
NSN
5961-00-420-3565
MFG
GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4098 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N3992
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203565
NSN
5961-00-420-3565
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4098 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2N3919
TRANSISTOR
NSN, MFG P/N
5961004203566
NSN
5961-00-420-3566
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5064 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COL
Related Searches:
4224-921
TRANSISTOR
NSN, MFG P/N
5961004203566
NSN
5961-00-420-3566
MFG
LOCKHEED ELECTRONICS CO INC INFORMATION ENGINEERING DIV
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.375 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5064 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COL
Related Searches:
JAN1N4808B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203603
NSN
5961-00-420-3603
JAN1N4808B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004203603
NSN
5961-00-420-3603
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4808B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-329
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/329 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 72.0 MAXIMUM BREAKDOWN V
Related Searches:
100166
TRANSISTOR
NSN, MFG P/N
5961004203668
NSN
5961-00-420-3668
MFG
NATIONAL MICRONETICS INC PACIFIC DIV
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N2369A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/317
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES M
