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5961-00-752-0673

20 Products

1N1411

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520673

NSN

5961-00-752-0673

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1N1411

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520673

NSN

5961-00-752-0673

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.125 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 1.310 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2800 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.605 INCHES MINIMUM AND 2.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1800.0 MAXIMUM REVERSE VOLTAGE, PEAK

593B6-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520426

NSN

5961-00-752-0426

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593B6-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520426

NSN

5961-00-752-0426

MFG

CARDWELL CONDENSER CORP LAPOINTE-ADMIRAL DIV

Description

NONDEFINITIVE SPEC/STD DATA: 1N25 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 BINDING POST AND 1 PIN

1261915-1

TRANSISTOR

NSN, MFG P/N

5961007520432

NSN

5961-00-752-0432

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1261915-1

TRANSISTOR

NSN, MFG P/N

5961007520432

NSN

5961-00-752-0432

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N333
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STA

2N333

TRANSISTOR

NSN, MFG P/N

5961007520432

NSN

5961-00-752-0432

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2N333

TRANSISTOR

NSN, MFG P/N

5961007520432

NSN

5961-00-752-0432

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N333
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STA

352-9003-000

TRANSISTOR

NSN, MFG P/N

5961007520432

NSN

5961-00-752-0432

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352-9003-000

TRANSISTOR

NSN, MFG P/N

5961007520432

NSN

5961-00-752-0432

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N333
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STA

USN2N333

TRANSISTOR

NSN, MFG P/N

5961007520432

NSN

5961-00-752-0432

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USN2N333

TRANSISTOR

NSN, MFG P/N

5961007520432

NSN

5961-00-752-0432

MFG

GENERAL ELECTRIC CO ELECTRIC CAPACITOR PRODUCT SECTION

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N333
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/37
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/37 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STA

1N1608

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520457

NSN

5961-00-752-0457

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1N1608

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520457

NSN

5961-00-752-0457

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2547 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

1N64P

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520554

NSN

5961-00-752-0554

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1N64P

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520554

NSN

5961-00-752-0554

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N64P TYPE
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK

34-8022

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520554

NSN

5961-00-752-0554

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34-8022

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520554

NSN

5961-00-752-0554

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INTEGRATED SYSTEMS & SOLUTIONS

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 90.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N64P TYPE
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM REVERSE VOLTAGE, PEAK

1751567

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520585

NSN

5961-00-752-0585

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1751567

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520585

NSN

5961-00-752-0585

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N570 TYPE
OVERALL DIAMETER: 0.720 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.260 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 7 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N570

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520585

NSN

5961-00-752-0585

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1N570

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520585

NSN

5961-00-752-0585

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N570 TYPE
OVERALL DIAMETER: 0.720 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.260 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 7 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK

MILE1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520585

NSN

5961-00-752-0585

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MILE1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520585

NSN

5961-00-752-0585

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N570 TYPE
OVERALL DIAMETER: 0.720 INCHES MAXIMUM
OVERALL LENGTH: 0.870 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.260 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 7 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N220

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520595

NSN

5961-00-752-0595

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1N220

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520595

NSN

5961-00-752-0595

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N220 TYPE
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 330.0 MAXIMUM REVERSE VOLTAGE, PEAK

4430015326

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520595

NSN

5961-00-752-0595

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4430015326

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520595

NSN

5961-00-752-0595

MFG

THALES DEFENCE DEUTSCHLAND GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N220 TYPE
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 330.0 MAXIMUM REVERSE VOLTAGE, PEAK

7053046P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520595

NSN

5961-00-752-0595

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7053046P1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520595

NSN

5961-00-752-0595

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N220 TYPE
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 330.0 MAXIMUM REVERSE VOLTAGE, PEAK

8585821

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520595

NSN

5961-00-752-0595

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8585821

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520595

NSN

5961-00-752-0595

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NONDEFINITIVE SPEC/STD DATA: 1N220 TYPE
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 330.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N1224

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520648

NSN

5961-00-752-0648

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1N1224

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520648

NSN

5961-00-752-0648

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.335 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2114 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

3207

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520648

NSN

5961-00-752-0648

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3207

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520648

NSN

5961-00-752-0648

MFG

WESTINGHOUSE ELECTRIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.335 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2114 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

330C894H48

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520648

NSN

5961-00-752-0648

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330C894H48

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961007520648

NSN

5961-00-752-0648

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.335 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE2114 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 FERRULE AND 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

2N78

TRANSISTOR

NSN, MFG P/N

5961007520655

NSN

5961-00-752-0655

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2N78

TRANSISTOR

NSN, MFG P/N

5961007520655

NSN

5961-00-752-0655

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 2N78
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILT19500
SEMICONDUCTOR MATERIAL: GERMANIUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD