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5961-01-214-2106
20 Products
28371-203G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142106
NSN
5961-01-214-2106
28371-203G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142106
NSN
5961-01-214-2106
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28371/203
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142106
NSN
5961-01-214-2106
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZY88/C3V0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142106
NSN
5961-01-214-2106
BZY88/C3V0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142106
NSN
5961-01-214-2106
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28371-483P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142107
NSN
5961-01-214-2107
28371-483P
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142107
NSN
5961-01-214-2107
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28371/483
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142107
NSN
5961-01-214-2107
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BZY88P/C6V2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142107
NSN
5961-01-214-2107
BZY88P/C6V2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142107
NSN
5961-01-214-2107
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
44529-046Z
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142108
NSN
5961-01-214-2108
44529-046Z
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142108
NSN
5961-01-214-2108
MFG
MARCONI ELECTRONICS INC MARCONI INSTRUMENTS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
44529/046
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142108
NSN
5961-01-214-2108
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
151RF30
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012142109
NSN
5961-01-214-2109
151RF30
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012142109
NSN
5961-01-214-2109
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 235.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-93
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 9.177 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
9001.116.001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012142109
NSN
5961-01-214-2109
9001.116.001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012142109
NSN
5961-01-214-2109
MFG
RADIODETECTION CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 235.00 AMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-93
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 9.177 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
1N4593R
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012142110
NSN
5961-01-214-2110
1N4593R
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012142110
NSN
5961-01-214-2110
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 235.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-93
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 9.177 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
9001.099.001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012142110
NSN
5961-01-214-2110
9001.099.001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012142110
NSN
5961-01-214-2110
MFG
RADIODETECTION CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 235.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-93
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 9.177 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPNP
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
G167039-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142111
NSN
5961-01-214-2111
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G167039-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142112
NSN
5961-01-214-2112
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G167043-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142113
NSN
5961-01-214-2113
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
978559-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142114
NSN
5961-01-214-2114
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
06-232855-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142115
NSN
5961-01-214-2115
06-232855-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012142115
NSN
5961-01-214-2115
MFG
KIDDE TECHNOLOGIES INC DBA FENWAL SAFETY SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
21795
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012142180
NSN
5961-01-214-2180
MFG
WESTERBEKE CORP
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
21796
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012142181
NSN
5961-01-214-2181
MFG
WESTERBEKE CORP
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
2N3904
TRANSISTOR
NSN, MFG P/N
5961012142382
NSN
5961-01-214-2382
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
