My Quote Request
5961-01-294-3175
20 Products
R5D00115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943175
NSN
5961-01-294-3175
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-30
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 4.625 INCHES MINIMUM AND 5.625 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.047 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 180.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
P17-100-150J1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943175
NSN
5961-01-294-3175
P17-100-150J1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943175
NSN
5961-01-294-3175
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-30
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 4.625 INCHES MINIMUM AND 5.625 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.047 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 180.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JANTX1N6319
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943176
NSN
5961-01-294-3176
JANTX1N6319
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943176
NSN
5961-01-294-3176
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 68.00 MILLIAMPERES NOMINAL MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6319
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND BURN IN AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: ZENER DIODE AND VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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2913377-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943177
NSN
5961-01-294-3177
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 175.00 MILLIAMPERES MINIMUM VOLTAGE REGULATOR DIODE CURRENT AND 475.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: MOUNTING HARDWARE AND BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 65.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.11 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 6.49 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
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2916928-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943725
NSN
5961-01-294-3725
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND THREADED HOLE
NOMINAL THREAD SIZE: 0.190 INCHES AND 0.190 INCHES
OVERALL DIAMETER: 0.975 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
OVERALL LENGTH: 1.218 INCHES MINIMUM AND 1.274 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON OR GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF AND UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
86-642
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943725
NSN
5961-01-294-3725
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND THREADED HOLE
NOMINAL THREAD SIZE: 0.190 INCHES AND 0.190 INCHES
OVERALL DIAMETER: 0.975 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
OVERALL LENGTH: 1.218 INCHES MINIMUM AND 1.274 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON OR GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF AND UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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PD3725
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943725
NSN
5961-01-294-3725
MFG
PD & E ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 0.30 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD AND THREADED HOLE
NOMINAL THREAD SIZE: 0.190 INCHES AND 0.190 INCHES
OVERALL DIAMETER: 0.975 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
OVERALL LENGTH: 1.218 INCHES MINIMUM AND 1.274 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON OR GERMANIUM
TERMINAL TYPE AND QUANTITY: 1 THREADED HOLE AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF AND UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 MAXIMUM REVERSE VOLTAGE, PEAK
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JANTX1N6323
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943726
NSN
5961-01-294-3726
JANTX1N6323
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012943726
NSN
5961-01-294-3726
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 47.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6323
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.1 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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2902770-5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943792
NSN
5961-01-294-3792
2902770-5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943792
NSN
5961-01-294-3792
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 0.490 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA: 10001-2902770-5 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
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SA4299
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943792
NSN
5961-01-294-3792
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943792
NSN
5961-01-294-3792
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 0.490 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA: 10001-2902770-5 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
Related Searches:
SDA295-5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943792
NSN
5961-01-294-3792
SDA295-5
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943792
NSN
5961-01-294-3792
MFG
SOLID STATE DEVICES INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 0.490 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
SPECIFICATION/STANDARD DATA: 10001-2902770-5 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
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5974682-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943793
NSN
5961-01-294-3793
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943793
NSN
5961-01-294-3793
MFG
NAVAL SEA SYSTEMS COMMAND
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 5 RING 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943793
NSN
5961-01-294-3793
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RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012943793
NSN
5961-01-294-3793
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2000.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 5 RING 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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147-1181-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012944605
NSN
5961-01-294-4605
147-1181-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012944605
NSN
5961-01-294-4605
MFG
INDUCTOTHERM INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
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147-1182-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012944606
NSN
5961-01-294-4606
147-1182-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012944606
NSN
5961-01-294-4606
MFG
INDUCTOTHERM INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
147-9109-9
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012944632
NSN
5961-01-294-4632
147-9109-9
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012944632
NSN
5961-01-294-4632
MFG
INDUCTOTHERM INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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147-1122-0
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012944646
NSN
5961-01-294-4646
147-1122-0
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012944646
NSN
5961-01-294-4646
MFG
INDUCTOTHERM INDUSTRIES INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
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147-1123-8
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012944647
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5961-01-294-4647
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012944647
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5961-01-294-4647
MFG
INDUCTOTHERM INDUSTRIES INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
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A3028849
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012944711
NSN
5961-01-294-4711
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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GZ54910A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012944711
NSN
5961-01-294-4711
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 180.00 AMPERES MAXIMUM PEAK PULSE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.280 INCHES MAXIMUM
OVERALL WIDTH: 1.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.365 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 TURRET
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS