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5961-01-303-0211
20 Products
IRF842
TRANSISTOR
NSN, MFG P/N
5961013030211
NSN
5961-01-303-0211
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES NOMINAL DRAIN CURRENT AND 500.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.584 INCHES MINIMUM AND 0.594 INCHES MAXIMUM
OVERALL WIDTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
TERMINAL LENGTH: 0.530 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE
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1296H82 PC 70
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013030213
NSN
5961-01-303-0213
1296H82 PC 70
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013030213
NSN
5961-01-303-0213
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 8466A55-H04
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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1296H82
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013030228
NSN
5961-01-303-0228
1296H82
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013030228
NSN
5961-01-303-0228
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1296H82
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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A3012713-1
TRANSISTOR
NSN, MFG P/N
5961013030319
NSN
5961-01-303-0319
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
TRANSISTOR
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PP8061
TRANSISTOR
NSN, MFG P/N
5961013030319
NSN
5961-01-303-0319
MFG
MICROSEMI PPC INC
Description
TRANSISTOR
Related Searches:
655787
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013030367
NSN
5961-01-303-0367
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: PACER SPECIAL
Related Searches:
D532GAC-102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013030367
NSN
5961-01-303-0367
D532GAC-102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013030367
NSN
5961-01-303-0367
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: PACER SPECIAL
Related Searches:
8786542
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013030854
NSN
5961-01-303-0854
MFG
GROVE U.S. L.L.C
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N6064
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013030855
NSN
5961-01-303-0855
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5369
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013031005
NSN
5961-01-303-1005
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 51.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -20.0 TO 20.0
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T500148004AQ
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013031938
NSN
5961-01-303-1938
T500148004AQ
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013031938
NSN
5961-01-303-1938
MFG
WESTINGHOUSE ELECTRIC CORP SEMI-CONDUCTOR DIV
Description
III END ITEM IDENTIFICATION: MOTOR GENERATOR SYS
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717538057-009
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013032930
NSN
5961-01-303-2930
717538057-009
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013032930
NSN
5961-01-303-2930
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: HOLES
MATERIAL: ALUMINUM ALLOY
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-A-250/11 MFR REF SINGLE MATERIAL RESPONSE
MOUNTING FACILITY TYPE AND QUANTITY: 6 UNTHREADED HOLE FIRST MOUNTING FACILITY 6 UNTHREADED HOLE SECOND MOUNTING FACILITY
OVERALL HEIGHT: 0.480 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH: 1.105 INCHES MAXIMUM
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
UNTHREADED MOUNTING HOLE DIAMETER: 0.019 INCHES MAXIMUM FIRST MOUNTING FACILITY 0.295 INCHES MAXIMUM SECOND MOUNTING FACILITY
Related Searches:
JANTX1N4552B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013032949
NSN
5961-01-303-2949
JANTX1N4552B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013032949
NSN
5961-01-303-2949
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 9300.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4552B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.35 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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0N365344-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013033954
NSN
5961-01-303-3954
0N365344-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013033954
NSN
5961-01-303-3954
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
587R343H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013034242
NSN
5961-01-303-4242
587R343H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013034242
NSN
5961-01-303-4242
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 97942-587R343 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES PEAK FORWARD SURGE CURRENT AND 0.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7000.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: F-16 ADF RADAR
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.800 INCHES MAXIMUM
OVERALL LENGTH: 2.530 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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SA10224
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013034242
NSN
5961-01-303-4242
SA10224
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013034242
NSN
5961-01-303-4242
MFG
SEMTECH CORPORATION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 97942-587R343 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES PEAK FORWARD SURGE CURRENT AND 0.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7000.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: F-16 ADF RADAR
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.800 INCHES MAXIMUM
OVERALL LENGTH: 2.530 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
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ECG095
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013034602
NSN
5961-01-303-4602
MFG
GENERAL DYNAMICS GOVERNMENT SYSTEMS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 4500.00 AMPERES NOMINAL ON-STATE CURRENT, OVERLOAD
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.670 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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FBL-00-186
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013034603
NSN
5961-01-303-4603
FBL-00-186
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013034603
NSN
5961-01-303-4603
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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090-071
TRANSISTOR
NSN, MFG P/N
5961013034841
NSN
5961-01-303-4841
MFG
MILLER ELECTRIC MFG CO
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: Y204A
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 11.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 38.31 MILLIMETERS NOMINAL
OVERALL WIDTH: 13.33 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 7.93 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
MJ11012
TRANSISTOR
NSN, MFG P/N
5961013034841
NSN
5961-01-303-4841
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: Y204A
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 11.4 MILLIMETERS MAXIMUM
OVERALL LENGTH: 38.31 MILLIMETERS NOMINAL
OVERALL WIDTH: 13.33 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 175.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 7.93 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN