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5961-01-505-5463

20 Products

1N3346

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015055463

NSN

5961-01-505-5463

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1N3346

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015055463

NSN

5961-01-505-5463

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 85.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.687 INCHES MAXIMUM
OVERALL LENGTH: 0.453 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL REGULATOR VOLTAGE, DC

243NQ100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015046633

NSN

5961-01-504-6633

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243NQ100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015046633

NSN

5961-01-504-6633

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

SPECIAL FEATURES: LOW REVERSE LEAKAGE AT HIGH TEMPERATURE; TYPICAL APPLICATIONS ARE SWITCHING POWER SUPPLIES, CONVERTERS, FREE-WHEELING DIODES AND REVERSE BATTERY PROTECTION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, DC

KDR3900PC19

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015046970

NSN

5961-01-504-6970

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KDR3900PC19

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015046970

NSN

5961-01-504-6970

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KJJ1907A
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:

KDR3900PC20

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015046974

NSN

5961-01-504-6974

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KDR3900PC20

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015046974

NSN

5961-01-504-6974

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KJH1907C
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:

VP2450N3-P016

TRANSISTOR

NSN, MFG P/N

5961015047600

NSN

5961-01-504-7600

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VP2450N3-P016

TRANSISTOR

NSN, MFG P/N

5961015047600

NSN

5961-01-504-7600

MFG

SUPERTEX INC.

KDG3900PC21

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015049109

NSN

5961-01-504-9109

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KDG3900PC21

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015049109

NSN

5961-01-504-9109

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KMD327A
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:

E20-335

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015049328

NSN

5961-01-504-9328

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E20-335

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015049328

NSN

5961-01-504-9328

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 22.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: CONTROL BOX; SEAWOLF CLASS SSN
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 60.0 WATTS MAXIMUM GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SELECTED FROM 2N5206
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

KDG3900PC24

TRANSISTOR

NSN, MFG P/N

5961015049532

NSN

5961-01-504-9532

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KDG3900PC24

TRANSISTOR

NSN, MFG P/N

5961015049532

NSN

5961-01-504-9532

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KGT165A
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:

KDG3900PC32

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015049540

NSN

5961-01-504-9540

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KDG3900PC32

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015049540

NSN

5961-01-504-9540

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KMH327A
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:

KDG3900PC33

TRANSISTOR

NSN, MFG P/N

5961015049542

NSN

5961-01-504-9542

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KDG3900PC33

TRANSISTOR

NSN, MFG P/N

5961015049542

NSN

5961-01-504-9542

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KGV165A
MANUFACTURERS CODE: 06RP6
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATION
THE MANUFACTURERS DATA:

31387-2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015050016

NSN

5961-01-505-0016

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31387-2

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961015050016

NSN

5961-01-505-0016

MFG

COOPER CROUSE-HINDS LLC DBA AIRPORT LIGHTING DIVISION

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: SCR/HEATSINK KIT
SPECIAL FEATURES: FOR GROUND LIGHTING SYSTEM; MODEL EAL

94-7620

TRANSISTOR

NSN, MFG P/N

5961015050236

NSN

5961-01-505-0236

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94-7620

TRANSISTOR

NSN, MFG P/N

5961015050236

NSN

5961-01-505-0236

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AN/TPT-T 1(V)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, MOSFET, N-CHANNEL
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 0.990 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 2.0 NOMINAL GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE

SC5961-0133

TRANSISTOR

NSN, MFG P/N

5961015050236

NSN

5961-01-505-0236

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SC5961-0133

TRANSISTOR

NSN, MFG P/N

5961015050236

NSN

5961-01-505-0236

MFG

DRS ICAS, LLC

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AN/TPT-T 1(V)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, MOSFET, N-CHANNEL
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 0.990 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 2.0 NOMINAL GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE

SMM20N50-2

TRANSISTOR

NSN, MFG P/N

5961015050236

NSN

5961-01-505-0236

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SMM20N50-2

TRANSISTOR

NSN, MFG P/N

5961015050236

NSN

5961-01-505-0236

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: AN/TPT-T 1(V)
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR, MOSFET, N-CHANNEL
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
OVERALL LENGTH: 1.563 INCHES NOMINAL
OVERALL WIDTH: 0.990 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 2.0 NOMINAL GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE

OP804SL

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015051436

NSN

5961-01-505-1436

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OP804SL

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5961015051436

NSN

5961-01-505-1436

MFG

OPTEK TECHNOLOGY INC

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MAINTENANCE RECORDER UNIT, TORNADO
III PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN SILICON PHOTOTRANSISTORS
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.179 INCHES MINIMUM AND 0.187 INCHES MAXIMUM
OVERALL LENGTH: 0.232 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NARROW RECEIVING ANGLE; VARIETY OF SENSITIVITY RANGES
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC

101-196

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015051898

NSN

5961-01-505-1898

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101-196

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015051898

NSN

5961-01-505-1898

MFG

PRESTOLITE ELECTRIC INC DEFENSE PRODUCTS DIV

Description

DESIGN CONTROL REFERENCE: 101-196
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: FUEL PUMP, 600 GPM (FU604G) 4930-01-392-7579
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE REC. POS.
MANUFACTURERS CODE: 0EDY1
THE MANUFACTURERS DATA:

30CPQ100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015052436

NSN

5961-01-505-2436

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30CPQ100

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015052436

NSN

5961-01-505-2436

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

2SA1431O

TRANSISTOR

NSN, MFG P/N

5961015052806

NSN

5961-01-505-2806

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2SA1431O

TRANSISTOR

NSN, MFG P/N

5961015052806

NSN

5961-01-505-2806

MFG

TOSHIBA INTERNATIONAL CORPORATION DBA TOSHIBA INTERNATIONAL

12933680

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015053348

NSN

5961-01-505-3348

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12933680

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015053348

NSN

5961-01-505-3348

MFG

U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM

2SC1039

TRANSISTOR

NSN, MFG P/N

5961015054443

NSN

5961-01-505-4443

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2SC1039

TRANSISTOR

NSN, MFG P/N

5961015054443

NSN

5961-01-505-4443

MFG

ADVANCED SEMICONDUCTOR INC. DBA A S I

Description

III END ITEM IDENTIFICATION: AN/GPN-22 RADAR SYSTEM
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: I (C) ABS. (A) COLLECTOR CURRENT 250M; ABSOLUTE MAX. POWER DISSIPATED 7.5W
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN