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5961-01-578-5111
20 Products
19TQ015S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015785111
NSN
5961-01-578-5111
MFG
VISHAY INTERTECHNOLOGY INC ELECTRIC COMPONENTS GROUP
Description
CAPACITANCE RATING IN PICOFARADS: 2000.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 19.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SCHOTTKY DIODE D2 PAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.575 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
SPECIAL FEATURES: APPROX. WEIGHT: 2 GRAMS; STORAGE TEMPERATURE RANGE: M55.0/P150.0 DEG C
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
99215443
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783597
NSN
5961-01-578-3597
MFG
THALES
Description
SPECIAL FEATURES: 50AMPS , 600VOLTS
Related Searches:
HFA50PA60C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783597
NSN
5961-01-578-3597
HFA50PA60C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783597
NSN
5961-01-578-3597
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SPECIAL FEATURES: 50AMPS , 600VOLTS
Related Searches:
30EPH06
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783600
NSN
5961-01-578-3600
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SPECIAL FEATURES: 30AMPS , 600VOLTS , SINGLE DIODE
Related Searches:
K100UF
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783602
NSN
5961-01-578-3602
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
SPECIAL FEATURES: 10000VOLTS (VRWM)
Related Searches:
1N4148
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783673
NSN
5961-01-578-3673
MFG
ROHM ELECTRONICS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SWITCHING DIODE
SPECIAL FEATURES: GLASS SEALED ENVELOPE (GSD); HIGH SPEED; HIGH RELIABILITY; SILICON EPITAXIAL PLANAR; VRM (V) 100; VR (V) 75 IFM (MA) 450
Related Searches:
99219878
TRANSISTOR
NSN, MFG P/N
5961015783812
NSN
5961-01-578-3812
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 3.70 AMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
OVERALL HEIGHT: 0.036 INCHES MINIMUM AND 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.111 INCHES MINIMUM AND 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.048 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
IRLML6402
TRANSISTOR
NSN, MFG P/N
5961015783812
NSN
5961-01-578-3812
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 3.70 AMPERES MAXIMUM DRAIN CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
OVERALL HEIGHT: 0.036 INCHES MINIMUM AND 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.111 INCHES MINIMUM AND 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.048 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.3 WATTS MAXIMUM GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
1N5338BRLG
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783825
NSN
5961-01-578-3825
1N5338BRLG
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783825
NSN
5961-01-578-3825
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
SPECIAL FEATURES: 180 WATT SURGE RATING. 5 WATT ZENER DIODES
Related Searches:
99163600
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783911
NSN
5961-01-578-3911
MFG
THALES
Description
SPECIAL FEATURES: 50 VOLTS
Related Searches:
MBRD660CT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015783911
NSN
5961-01-578-3911
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SPECIAL FEATURES: 50 VOLTS
Related Searches:
IRF640A
TRANSISTOR
NSN, MFG P/N
5961015784231
NSN
5961-01-578-4231
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: N-CHANNEL POWER MOFSET
SPECIAL FEATURES: FEATURES: AVALANCHE RUGGED TECHNOLOGY;RUGGED GATE OXIDE TECHNOLOGY;LOWER INPUT CAPACITANCE;IMPROVED GATE CHARGE;EXTENDED SAFE OPERATING AREA;LOWER LEAKAGE CURRENT
Related Searches:
99212352
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015784559
NSN
5961-01-578-4559
MFG
THALES
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 0.9 MILLIMETERS NOMINAL
OVERALL LENGTH: 2.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 1.2 MILLIMETERS NOMINAL
SPECIAL FEATURES: HIGH SWITCHING SPEED: MAX 4NS
Related Searches:
BAS316
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015784559
NSN
5961-01-578-4559
MFG
PHILIPS SEMICONDUCTORS INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 0.9 MILLIMETERS NOMINAL
OVERALL LENGTH: 2.5 MILLIMETERS NOMINAL
OVERALL WIDTH: 1.2 MILLIMETERS NOMINAL
SPECIAL FEATURES: HIGH SWITCHING SPEED: MAX 4NS
Related Searches:
99189122
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015784676
NSN
5961-01-578-4676
MFG
THALES
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 1.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 2.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 1.2 MILLIMETERS NOMINAL
SPECIAL FEATURES: REPEATIVE PEAK REVERSE VOLTAGE: MAX 85V
Related Searches:
BAW56W
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015784676
NSN
5961-01-578-4676
MFG
PHILIPS SEMICONDUCTORS INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 1.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 2.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 1.2 MILLIMETERS NOMINAL
SPECIAL FEATURES: REPEATIVE PEAK REVERSE VOLTAGE: MAX 85V
Related Searches:
99189121
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015784712
NSN
5961-01-578-4712
MFG
THALES
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 1.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 2.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 1.2 MILLIMETERS NOMINAL
SPECIAL FEATURES: REPETITIVE PEAK FORWARD CURRENT: MAX .500MA
Related Searches:
BAV99W
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015784712
NSN
5961-01-578-4712
MFG
PHILIPS SEMICONDUCTORS INC
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
OVERALL HEIGHT: 1.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 2.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 1.2 MILLIMETERS NOMINAL
SPECIAL FEATURES: REPETITIVE PEAK FORWARD CURRENT: MAX .500MA
Related Searches:
99189120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015784720
NSN
5961-01-578-4720
MFG
THALES
Description
III END ITEM IDENTIFICATION: PHILIPS SEMICONDUCTORS
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
SPECIAL FEATURES: PLASTIC SMD ENVELOPE
Related Searches:
BAV70W
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015784720
NSN
5961-01-578-4720
MFG
PHILIPS SEMICONDUCTORS INC
Description
III END ITEM IDENTIFICATION: PHILIPS SEMICONDUCTORS
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: CLIP
SPECIAL FEATURES: PLASTIC SMD ENVELOPE
