My Quote Request
5962-00-001-7113
20 Products
737208-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962000017113
NSN
5962-00-001-7113
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.620 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.800 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
TEST DATA DOCUMENT: 96214-640108 DRAWING
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SN5417J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000016012
NSN
5962-00-001-6012
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: SN5417J
DESIGN FUNCTION AND QUANTITY: 6 BUFFER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 01295
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
655269-1
CONTROL,RADAR SET
NSN, MFG P/N
5962000017112
NSN
5962-00-001-7112
MFG
RAYTHEON COMPANY
Description
CONNECTOR MANUFACTURER CODE: 71468 AND 15653
CONNECTOR MANUFACTURER PART NUMBER: MTA2-1205L1 AND 095-9104-0000
III FRAGILITY FACTOR: MODERATELY RUGGED
III FSC APPLICATION DATA: RADAR EQUIPMENT,AIRBORNE
INCLOSURE TYPE: ENCASED
MAXIMUM VOLTAGE RATING IN VOLTS: 20.0 DC
MOUNTING METHOD: PLUG-IN
POWER SOURCE: EXTERNAL
Related Searches:
48-033566-01
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962000017322
NSN
5962-00-001-7322
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.690 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR AND 2 SWITCH, ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 825.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 600.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1600.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.0 VOLTS MAXIMUM POWER SOURCE
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DG134ADD
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962000017322
NSN
5962-00-001-7322
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.690 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR AND 2 SWITCH, ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 825.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 600.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1600.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.0 VOLTS MAXIMUM POWER SOURCE
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DG134AP
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962000017322
NSN
5962-00-001-7322
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.690 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR AND 2 SWITCH, ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 825.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 600.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1600.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
928652-101
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017434
NSN
5962-00-001-7434
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: 50-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 928652-101
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED AND HIGH SPEED AND MEDIUM POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 82577
MAXIMUM POWER DISSIPATION RATING: 132.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-928652 STANDARD
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017434
NSN
5962-00-001-7434
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: 50-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 928652-101
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED AND HIGH SPEED AND MEDIUM POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 82577
MAXIMUM POWER DISSIPATION RATING: 132.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-928652 STANDARD
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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9007DM/B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017435
NSN
5962-00-001-7435
MFG
ROCHESTER ELECTRONICS LLC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED AND HIGH SPEED AND MEDIUM POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 44.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-928694 STANDARD
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
928694-101
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017435
NSN
5962-00-001-7435
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED AND HIGH SPEED AND MEDIUM POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 44.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-928694 STANDARD
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017435
NSN
5962-00-001-7435
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED AND HIGH SPEED AND MEDIUM POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 44.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-928694 STANDARD
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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MC3015D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017435
NSN
5962-00-001-7435
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED AND HIGH SPEED AND MEDIUM POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 44.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-928694 STANDARD
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017435
NSN
5962-00-001-7435
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED AND HIGH SPEED AND MEDIUM POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 44.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-928694 STANDARD
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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932044-1B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017447
NSN
5962-00-001-7447
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 112.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 82577-932044 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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CC334J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017447
NSN
5962-00-001-7447
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 112.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 82577-932044 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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HL17073
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017447
NSN
5962-00-001-7447
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 112.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 82577-932044 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017447
NSN
5962-00-001-7447
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 112.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 82577-932044 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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SD13043
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017447
NSN
5962-00-001-7447
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 112.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 82577-932044 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN22743
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017447
NSN
5962-00-001-7447
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 112.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 82577-932044 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
928653-101
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962000017448
NSN
5962-00-001-7448
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 928653-101
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND EDGE TRIGGERED AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 82577
MAXIMUM POWER DISSIPATION RATING: 187.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-928653 STANDARD
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE