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5962-00-421-0222

20 Products

SG111-17

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

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SG111-17

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.070 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

RG110K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

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RG110K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.070 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

RX5234

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

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RX5234

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.070 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

SC16490FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

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SC16490FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.070 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

SG110-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

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SG110-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210222

NSN

5962-00-421-0222

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.070 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

MC2151F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210224

NSN

5962-00-421-0224

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MC2151F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210224

NSN

5962-00-421-0224

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 88.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

RG221K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210224

NSN

5962-00-421-0224

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RG221K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210224

NSN

5962-00-421-0224

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 88.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

SG221-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210224

NSN

5962-00-421-0224

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SG221-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210224

NSN

5962-00-421-0224

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 88.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

351-7147-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210225

NSN

5962-00-421-0225

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351-7147-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210225

NSN

5962-00-421-0225

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

G250

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210225

NSN

5962-00-421-0225

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G250

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210225

NSN

5962-00-421-0225

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

RG250K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210225

NSN

5962-00-421-0225

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RG250K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210225

NSN

5962-00-421-0225

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

SG250-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210225

NSN

5962-00-421-0225

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SG250-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210225

NSN

5962-00-421-0225

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

351-7268-020

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

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351-7268-020

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

CG271

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

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CG271

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

MFG

FREESCALE SEMICONDUCTOR INC.

G271

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

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G271

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

RG271K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

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RG271K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

SG271-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

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SG271-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210226

NSN

5962-00-421-0226

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

351-7079-020

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210227

NSN

5962-00-421-0227

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351-7079-020

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210227

NSN

5962-00-421-0227

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND EXPANDABLE AND W/RESISTOR AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 WIDE 2-2-2-3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

MC551F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210227

NSN

5962-00-421-0227

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MC551F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210227

NSN

5962-00-421-0227

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND EXPANDABLE AND W/RESISTOR AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 WIDE 2-2-2-3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

RG51K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210227

NSN

5962-00-421-0227

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RG51K

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004210227

NSN

5962-00-421-0227

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND EXPANDABLE AND W/RESISTOR AND MEDIUM SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 WIDE 2-2-2-3 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT