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5962-00-993-0059

20 Products

SG11005

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930059

NSN

5962-00-993-0059

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SG11005

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930059

NSN

5962-00-993-0059

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 05869-717310-15 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MC931F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

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MC931F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND POSITIVE OUTPUTS AND EDGE TRIGGERED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

PL9931-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

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PL9931-51

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

MFG

FORD AEROSPACE CORP ELECTRONICS DIV

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND POSITIVE OUTPUTS AND EDGE TRIGGERED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

SW931-1F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

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SW931-1F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

MFG

HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND POSITIVE OUTPUTS AND EDGE TRIGGERED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

U3I993159X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

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U3I993159X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009918559

NSN

5962-00-991-8559

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND POSITIVE OUTPUTS AND EDGE TRIGGERED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

910772

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930020

NSN

5962-00-993-0020

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910772

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930020

NSN

5962-00-993-0020

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: R S CLOCKED FLIP FLOP,HERMETICALLY SEALED

UX3993159X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930020

NSN

5962-00-993-0020

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UX3993159X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930020

NSN

5962-00-993-0020

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.260 INCHES NOMINAL
BODY WIDTH: 0.260 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: R S CLOCKED FLIP FLOP,HERMETICALLY SEALED

717310-10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930055

NSN

5962-00-993-0055

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717310-10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930055

NSN

5962-00-993-0055

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND TEMPERATURE CONTROLLED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717310-10 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

SC1640FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930055

NSN

5962-00-993-0055

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SC1640FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930055

NSN

5962-00-993-0055

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND TEMPERATURE CONTROLLED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717310-10 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

SG4009

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930055

NSN

5962-00-993-0055

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SG4009

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930055

NSN

5962-00-993-0055

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND TEMPERATURE CONTROLLED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717310-10 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

TG143FTN1284

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930055

NSN

5962-00-993-0055

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TG143FTN1284

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930055

NSN

5962-00-993-0055

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND TEMPERATURE CONTROLLED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717310-10 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

717310-13

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930057

NSN

5962-00-993-0057

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717310-13

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930057

NSN

5962-00-993-0057

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.060 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, EXCLUSIVE OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 140.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 05869-717310-13 SPECIFICATION
TIME RATING PER CHACTERISTIC: 16.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

SG9004

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930057

NSN

5962-00-993-0057

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SG9004

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930057

NSN

5962-00-993-0057

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.060 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, EXCLUSIVE OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 140.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 05869-717310-13 SPECIFICATION
TIME RATING PER CHACTERISTIC: 16.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

T1C9060F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930057

NSN

5962-00-993-0057

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T1C9060F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930057

NSN

5962-00-993-0057

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.060 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, EXCLUSIVE OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 140.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 05869-717310-13 SPECIFICATION
TIME RATING PER CHACTERISTIC: 16.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

717310-14

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930058

NSN

5962-00-993-0058

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717310-14

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930058

NSN

5962-00-993-0058

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.265 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 05869-717310-14 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SC1642

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930058

NSN

5962-00-993-0058

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SC1642

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930058

NSN

5962-00-993-0058

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.265 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 05869-717310-14 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SG6008

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930058

NSN

5962-00-993-0058

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SG6008

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930058

NSN

5962-00-993-0058

MFG

SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.265 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 15.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 05869-717310-14 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

717310-015

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930059

NSN

5962-00-993-0059

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717310-015

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930059

NSN

5962-00-993-0059

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 05869-717310-15 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

717310-15

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930059

NSN

5962-00-993-0059

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717310-15

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930059

NSN

5962-00-993-0059

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 05869-717310-15 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SC1643FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930059

NSN

5962-00-993-0059

View More Info

SC1643FH

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962009930059

NSN

5962-00-993-0059

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 05869-717310-15 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE