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5962-01-017-7492

20 Products

SNC54S08J-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

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SNC54S08J-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 128.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION

S54S08F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

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S54S08F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 128.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION

SN54S08J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

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SN54S08J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 128.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION

SN74S08N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

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SN74S08N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 128.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION

SN74S08N00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

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SN74S08N00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 128.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION

SNC54S08J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

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SNC54S08J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177492

NSN

5962-01-017-7492

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 128.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION

446/4/04189/037

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

View More Info

446/4/04189/037

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

MFG

GEFANUC INTELLIGENT PLATFORMS LIMITED

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 164.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

57150-0110-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

View More Info

57150-0110-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

MFG

CONCURRENT COMPUTER CORPORATION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 164.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

5E8071-22-2S01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

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5E8071-22-2S01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 164.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

GM820AEK1C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

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GM820AEK1C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 164.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SN54S37J00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

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SN54S37J00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 164.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SN74S37J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

View More Info

SN74S37J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 164.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SN74S37N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

View More Info

SN74S37N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 164.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SNC54S37J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

View More Info

SNC54S37J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010177493

NSN

5962-01-017-7493

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND HIGH SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 164.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

91422274

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

View More Info

91422274

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

MFG

THALES

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-2 MIL-M-38510
DESIGN CONTROL REFERENCE: SM-A-745027-1
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND EXTERNALLY COMPENSATED AND MONOLITHIC
III END ITEM IDENTIFICATION: DL 745051
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 80063
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 80063-SM-A-745027 DRAWING
THE MANUFACTURERS DATA:

LM723H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

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LM723H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-2 MIL-M-38510
DESIGN CONTROL REFERENCE: SM-A-745027-1
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND EXTERNALLY COMPENSATED AND MONOLITHIC
III END ITEM IDENTIFICATION: DL 745051
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 80063
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 80063-SM-A-745027 DRAWING
THE MANUFACTURERS DATA:

NL23906

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

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NL23906

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-2 MIL-M-38510
DESIGN CONTROL REFERENCE: SM-A-745027-1
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND EXTERNALLY COMPENSATED AND MONOLITHIC
III END ITEM IDENTIFICATION: DL 745051
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 80063
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 80063-SM-A-745027 DRAWING
THE MANUFACTURERS DATA:

SM-A-745027-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

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SM-A-745027-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-2 MIL-M-38510
DESIGN CONTROL REFERENCE: SM-A-745027-1
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND EXTERNALLY COMPENSATED AND MONOLITHIC
III END ITEM IDENTIFICATION: DL 745051
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 80063
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 80063-SM-A-745027 DRAWING
THE MANUFACTURERS DATA:

UA723HM

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

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UA723HM

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-2 MIL-M-38510
DESIGN CONTROL REFERENCE: SM-A-745027-1
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND EXTERNALLY COMPENSATED AND MONOLITHIC
III END ITEM IDENTIFICATION: DL 745051
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 80063
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 80063-SM-A-745027 DRAWING
THE MANUFACTURERS DATA:

UA723L

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

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UA723L

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010178018

NSN

5962-01-017-8018

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-2 MIL-M-38510
DESIGN CONTROL REFERENCE: SM-A-745027-1
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND EXTERNALLY COMPENSATED AND MONOLITHIC
III END ITEM IDENTIFICATION: DL 745051
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MANUFACTURERS CODE: 80063
MAXIMUM POWER DISSIPATION RATING: 350.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 80063-SM-A-745027 DRAWING
THE MANUFACTURERS DATA: