My Quote Request
5962-01-114-5424
20 Products
DMS 86043B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145424
NSN
5962-01-114-5424
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLIER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 115.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 115.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145424
NSN
5962-01-114-5424
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLIER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 115.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 115.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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93150-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011145425
NSN
5962-01-114-5425
MFG
DRS ICAS LLC
Description
(NON-CORE DATA) BIT QUANTITY: 32
(NON-CORE DATA) WORD QUANTITY: 4
BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011145425
NSN
5962-01-114-5425
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 32
(NON-CORE DATA) WORD QUANTITY: 4
BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011145425
NSN
5962-01-114-5425
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 32
(NON-CORE DATA) WORD QUANTITY: 4
BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011145425
NSN
5962-01-114-5425
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 32
(NON-CORE DATA) WORD QUANTITY: 4
BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011145425
NSN
5962-01-114-5425
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 32
(NON-CORE DATA) WORD QUANTITY: 4
BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011145425
NSN
5962-01-114-5425
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 32
(NON-CORE DATA) WORD QUANTITY: 4
BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011145425
NSN
5962-01-114-5425
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 32
(NON-CORE DATA) WORD QUANTITY: 4
BODY HEIGHT: 0.070 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 1.150 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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520274-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145426
NSN
5962-01-114-5426
MFG
BAE SYSTEMS CONTROLS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145426
NSN
5962-01-114-5426
MFG
DRS ICAS LLC
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145426
NSN
5962-01-114-5426
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145426
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5962-01-114-5426
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145426
NSN
5962-01-114-5426
MFG
ADELCO ELEKTRONIK GMBH
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145427
NSN
5962-01-114-5427
MFG
ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL IN, PARALLEL OUT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIDIRECTIONAL AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145427
NSN
5962-01-114-5427
MFG
DRS ICAS LLC
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL IN, PARALLEL OUT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIDIRECTIONAL AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145427
NSN
5962-01-114-5427
MFG
HARRIS CORP FINDLAY OPNS
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL IN, PARALLEL OUT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIDIRECTIONAL AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145427
NSN
5962-01-114-5427
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL IN, PARALLEL OUT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIDIRECTIONAL AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145427
NSN
5962-01-114-5427
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL IN, PARALLEL OUT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIDIRECTIONAL AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CD4034BE
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011145427
NSN
5962-01-114-5427
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL IN, PARALLEL OUT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIDIRECTIONAL AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE