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5962-01-162-4270

20 Products

TBP24S10W

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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TBP24S10W

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

5301-1F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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5301-1F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

53S141W/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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53S141W/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

82S129/BFA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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82S129/BFA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

932684-505B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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932684-505B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

AM27S21/BFA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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AM27S21/BFA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

B1584-505B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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B1584-505B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

CC1643

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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CC1643

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

HM9-7611

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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HM9-7611

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM HEAD 015

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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ROM/PROM HEAD 015

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

S82S129WJ

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

View More Info

S82S129WJ

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN91026W

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

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SN91026W

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624270

NSN

5962-01-162-4270

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932684 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

5353-1F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

View More Info

5353-1F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932750 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

53S441W

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

View More Info

53S441W

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932750 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

932750-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

View More Info

932750-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932750 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

932750-4B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

View More Info

932750-4B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932750 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

93453FM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

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93453FM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932750 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

AM27A33/BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

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AM27A33/BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932750 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

AM27S33FM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

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AM27S33FM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932750 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

B1614-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

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B1614-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011624271

NSN

5962-01-162-4271

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC OR METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932750 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE