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5962-01-168-7577

20 Products

LS141TS

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011687577

NSN

5962-01-168-7577

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LS141TS

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011687577

NSN

5962-01-168-7577

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.186 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.370 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: CAN
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

SM-A-942704

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011686559

NSN

5962-01-168-6559

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SM-A-942704

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011686559

NSN

5962-01-168-6559

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20905BJA
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/209
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/209 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

163405

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686697

NSN

5962-01-168-6697

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163405

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686697

NSN

5962-01-168-6697

MFG

GE AVIATION SYSTEMS LLC

SCMA10809

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686697

NSN

5962-01-168-6697

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SCMA10809

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686697

NSN

5962-01-168-6697

MFG

SEMTECH CORPORATION

TSK-535-002

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686697

NSN

5962-01-168-6697

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TSK-535-002

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686697

NSN

5962-01-168-6697

MFG

MURATA ERIE NORTH AMERICA INC DIVOF MURATA ERIE

103815-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686698

NSN

5962-01-168-6698

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103815-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686698

NSN

5962-01-168-6698

MFG

VEGA PRECISION LABORATORIES INC SUB OF HERLEY INDUSTRIES INC

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
III OVERALL HEIGHT: 0.275 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 22.0 VOLTS MAXIMUM POWER SOURCE

103845-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686698

NSN

5962-01-168-6698

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103845-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686698

NSN

5962-01-168-6698

MFG

VEGA PRECISION LABORATORIES INC SUB OF HERLEY INDUSTRIES INC

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
III OVERALL HEIGHT: 0.275 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 22.0 VOLTS MAXIMUM POWER SOURCE

AM2732ADC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686698

NSN

5962-01-168-6698

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AM2732ADC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686698

NSN

5962-01-168-6698

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
III OVERALL HEIGHT: 0.275 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 22.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 042

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686698

NSN

5962-01-168-6698

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ROM/PROM FAMILY 042

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686698

NSN

5962-01-168-6698

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
III OVERALL HEIGHT: 0.275 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 22.0 VOLTS MAXIMUM POWER SOURCE

5309-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686702

NSN

5962-01-168-6702

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5309-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686702

NSN

5962-01-168-6702

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

7783187-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686702

NSN

5962-01-168-6702

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7783187-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686702

NSN

5962-01-168-6702

MFG

OGDEN AIR LOGISTICS CENTER

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686702

NSN

5962-01-168-6702

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ROM/PROM FAMILY 010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686702

NSN

5962-01-168-6702

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5309-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686703

NSN

5962-01-168-6703

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5309-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686703

NSN

5962-01-168-6703

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.175 INCHES NOMINAL
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND HIGH RELIABILITY AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

7783188-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686703

NSN

5962-01-168-6703

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7783188-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011686703

NSN

5962-01-168-6703

MFG

OGDEN AIR LOGISTICS CENTER

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.175 INCHES NOMINAL
BODY LENGTH: 0.955 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND HIGH RELIABILITY AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

LF356

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686820

NSN

5962-01-168-6820

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LF356

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686820

NSN

5962-01-168-6820

MFG

NATIONAL SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND HIGH IMPEDANCE AND LOW CURRENT AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 570.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.0 VOLTS MAXIMUM POWER SOURCE

LF356AH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686820

NSN

5962-01-168-6820

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LF356AH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011686820

NSN

5962-01-168-6820

MFG

NATIONAL SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND HIGH IMPEDANCE AND LOW CURRENT AND INTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 570.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 16.0 VOLTS MAXIMUM POWER SOURCE

616719-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011687226

NSN

5962-01-168-7226

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616719-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011687226

NSN

5962-01-168-7226

MFG

RAYTHEON COMPANY DBA RAYTHEON

710207-22

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011687417

NSN

5962-01-168-7417

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710207-22

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011687417

NSN

5962-01-168-7417

MFG

RAYTHEON COMPANY DBA RAYTHEON

MPL940SB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011687417

NSN

5962-01-168-7417

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MPL940SB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011687417

NSN

5962-01-168-7417

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

MPL940W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011687417

NSN

5962-01-168-7417

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MPL940W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011687417

NSN

5962-01-168-7417

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP