My Quote Request
5962-01-332-5357
20 Products
CA2818B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013325357
NSN
5962-01-332-5357
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: W/BENT LEADS
SPECIAL FEATURES: GAIN 18.5 DB; 900 MW; CASE NO. 714-01,STYLE 1
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616483
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013324657
NSN
5962-01-332-4657
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HERMETICALLY SEALED AND W/ENABLE AND W/BUFFERED OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MAXIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
646172-9023
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013324657
NSN
5962-01-332-4657
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HERMETICALLY SEALED AND W/ENABLE AND W/BUFFERED OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MAXIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013324657
NSN
5962-01-332-4657
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HERMETICALLY SEALED AND W/ENABLE AND W/BUFFERED OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MAXIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
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5962013324657
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5962-01-332-4657
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013324657
NSN
5962-01-332-4657
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND HERMETICALLY SEALED AND W/ENABLE AND W/BUFFERED OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MAXIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616483
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013324658
NSN
5962-01-332-4658
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
646173-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013324658
NSN
5962-01-332-4658
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MD2716
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013324658
NSN
5962-01-332-4658
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013324658
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5962-01-332-4658
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013324658
NSN
5962-01-332-4658
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 5895-01-167-7655 RECEIVING SET,RADIO
III OVERALL HEIGHT: 0.345 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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659-0313-003
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013324659
NSN
5962-01-332-4659
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
BODY HEIGHT: 0.175 INCHES NOMINAL
BODY LENGTH: 2.080 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.600 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 659-0313-003
FEATURES PROVIDED: HERMETICALLY SEALED AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 27 INPUT
MANUFACTURERS CODE: 13499
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: ACFT MODEL HU25A AUDIO CONTROL PANEL NO.1,2.P/N 622-4149-001
THE MANUFACTURERS DATA:
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MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962013324660
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5962-01-332-4660
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MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962013324660
NSN
5962-01-332-4660
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.037 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.333 INCHES MINIMUM AND 0.347 INCHES MAXIMUM
BODY WIDTH: 0.249 INCHES MINIMUM AND 0.261 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE
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5962013324660
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CHIP SUPPLY INC
Description
BODY HEIGHT: 0.037 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.333 INCHES MINIMUM AND 0.347 INCHES MAXIMUM
BODY WIDTH: 0.249 INCHES MINIMUM AND 0.261 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962013324660
NSN
5962-01-332-4660
MFG
MINCO TECHNOLOGY LABS INC .
Description
BODY HEIGHT: 0.037 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.333 INCHES MINIMUM AND 0.347 INCHES MAXIMUM
BODY WIDTH: 0.249 INCHES MINIMUM AND 0.261 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013325134
NSN
5962-01-332-5134
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
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5962013325135
NSN
5962-01-332-5135
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,LINEAR
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NSN, MFG P/N
5962013325136
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5962-01-332-5136
MFG
TELCOM SEMICONDUCTOR INC
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013325137
NSN
5962-01-332-5137
MFG
TELCOM SEMICONDUCTOR INC
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013325138
NSN
5962-01-332-5138
MFG
THALES NEDERLAND
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013325138
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5962-01-332-5138
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013325139
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ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
MICROCIRCUIT,DIGITAL