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5962-01-449-9639

20 Products

12917789-6

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499639

NSN

5962-01-449-9639

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12917789-6

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499639

NSN

5962-01-449-9639

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USE ON M1A2 TANK
SPECIAL FEATURES: ALTERED ITEM DRAWING

PALC22V10D25LMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498849

NSN

5962-01-449-8849

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PALC22V10D25LMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498849

NSN

5962-01-449-8849

MFG

CYPRESS SEMICONDUCTOR CORPORATION

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498849

NSN

5962-01-449-8849

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498849

NSN

5962-01-449-8849

MFG

DLA LAND AND MARITIME

294246-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498994

NSN

5962-01-449-8994

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294246-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498994

NSN

5962-01-449-8994

MFG

CHARLES STARK DRAPER LABORATORY INC THE DBA DRAPER LABORATORY DIV HEADQUARTERS

Description

(NON-CORE DATA) BIT QUANTITY: 65536
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -5.50 TO 125.00 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 64K (8KX8) DUAL-PORT STATIC RAM, 68 PIN QUAD FLAT PKG
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 68 LEADLESS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT

294370-27

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498994

NSN

5962-01-449-8994

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294370-27

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498994

NSN

5962-01-449-8994

MFG

CHARLES STARK DRAPER LABORATORY INC THE DBA DRAPER LABORATORY DIV HEADQUARTERS

Description

(NON-CORE DATA) BIT QUANTITY: 65536
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -5.50 TO 125.00 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 64K (8KX8) DUAL-PORT STATIC RAM, 68 PIN QUAD FLAT PKG
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 68 LEADLESS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT

IDT7005L35FB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498994

NSN

5962-01-449-8994

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IDT7005L35FB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498994

NSN

5962-01-449-8994

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 65536
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -5.50 TO 125.00 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 64K (8KX8) DUAL-PORT STATIC RAM, 68 PIN QUAD FLAT PKG
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 68 LEADLESS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT

IDT7005L45FB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498994

NSN

5962-01-449-8994

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IDT7005L45FB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014498994

NSN

5962-01-449-8994

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 65536
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -5.50 TO 125.00 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: 64K (8KX8) DUAL-PORT STATIC RAM, 68 PIN QUAD FLAT PKG
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 68 LEADLESS
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL INPUT

5R8061-242-3001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499004

NSN

5962-01-449-9004

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5R8061-242-3001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499004

NSN

5962-01-449-9004

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

III END ITEM IDENTIFICATION: C-17A ACFT CAGE 73030
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
MEMORY DEVICE TYPE: PROGRAMMED
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 32 LEADLESS

804436-003

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499004

NSN

5962-01-449-9004

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804436-003

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499004

NSN

5962-01-449-9004

MFG

HAMILTON SUNDSTRAND CORPORATION

Description

III END ITEM IDENTIFICATION: C-17A ACFT CAGE 73030
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
MEMORY DEVICE TYPE: PROGRAMMED
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 32 LEADLESS

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499004

NSN

5962-01-449-9004

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499004

NSN

5962-01-449-9004

MFG

DLA LAND AND MARITIME

Description

III END ITEM IDENTIFICATION: C-17A ACFT CAGE 73030
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
MEMORY DEVICE TYPE: PROGRAMMED
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 32 LEADLESS

PLS168AN

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499033

NSN

5962-01-449-9033

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PLS168AN

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962014499033

NSN

5962-01-449-9033

MFG

PHILIPS SEMICONDUCTORS INC

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PIN

SSI75T201-IP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499072

NSN

5962-01-449-9072

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SSI75T201-IP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499072

NSN

5962-01-449-9072

MFG

SILICONSYSTEMS INC

Description

DESIGN FUNCTION AND QUANTITY: 2 RECEIVER
III END ITEM IDENTIFICATION: CAMPS EQUIPMENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG FAHRENHEIT
TERMINAL TYPE AND QUANTITY: 22 PIN

12918433

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499429

NSN

5962-01-449-9429

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12918433

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499429

NSN

5962-01-449-9429

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: BIPOLAR ADVANCED, SCHOTTKY TTL, DUAL MULTIPLEXER
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-N-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -4.5 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE

54F253/BEAJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499429

NSN

5962-01-449-9429

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54F253/BEAJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499429

NSN

5962-01-449-9429

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: BIPOLAR ADVANCED, SCHOTTKY TTL, DUAL MULTIPLEXER
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-N-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -4.5 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE

54F253DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499429

NSN

5962-01-449-9429

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54F253DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499429

NSN

5962-01-449-9429

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: BIPOLAR ADVANCED, SCHOTTKY TTL, DUAL MULTIPLEXER
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-N-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -4.5 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE

NH12918433

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499429

NSN

5962-01-449-9429

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NH12918433

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499429

NSN

5962-01-449-9429

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: BIPOLAR ADVANCED, SCHOTTKY TTL, DUAL MULTIPLEXER
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-N-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -4.5 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE

50100320

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962014499580

NSN

5962-01-449-9580

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50100320

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962014499580

NSN

5962-01-449-9580

MFG

THALES OPTRONICS BURY ST EDMUNDS LT D

Description

BODY HEIGHT: 0.280 INCHES NOMINAL
BODY LENGTH: 1.740 INCHES NOMINAL
BODY WIDTH: 1.140 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, SYNCHRO TO DIGITAL
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND HYBRID AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: 14-BIT RESOLUTION, 400.0 HZ REFERENCE FREQUENCY
TERMINAL TYPE AND QUANTITY: 32 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.0 VOLTS NOMINAL REFERENCE

SDC1768-411/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962014499580

NSN

5962-01-449-9580

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SDC1768-411/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962014499580

NSN

5962-01-449-9580

MFG

ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS

Description

BODY HEIGHT: 0.280 INCHES NOMINAL
BODY LENGTH: 1.740 INCHES NOMINAL
BODY WIDTH: 1.140 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, SYNCHRO TO DIGITAL
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND HYBRID AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: 14-BIT RESOLUTION, 400.0 HZ REFERENCE FREQUENCY
TERMINAL TYPE AND QUANTITY: 32 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.0 VOLTS NOMINAL REFERENCE

1071438C8

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499581

NSN

5962-01-449-9581

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1071438C8

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499581

NSN

5962-01-449-9581

MFG

THALES OPTRONICS BURY ST EDMUNDS LT D

Description

DESIGN FUNCTION AND QUANTITY: 1 PORT, INPUT/OUTPUT
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE

AD7569TQ/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499581

NSN

5962-01-449-9581

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AD7569TQ/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962014499581

NSN

5962-01-449-9581

MFG

ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS

Description

DESIGN FUNCTION AND QUANTITY: 1 PORT, INPUT/OUTPUT
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE