My Quote Request
5962-01-473-8203
20 Products
2635-107-02-1-19
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014738203
NSN
5962-01-473-8203
MFG
NAVAL SEA SYSTEMS COMMAND
Description
DESIGN FUNCTION AND QUANTITY: 1 BUFFER
FEATURES PROVIDED: 3-STATE OUTPUT AND EDGE TRIGGERED AND W/CLOCK
III END ITEM IDENTIFICATION: SUBMARINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 10-BIT BUS-INTERFACE FLIP-FLOPS W/3-STATE OUTPUTS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS NOMINAL INPUT
Related Searches:
348120-18
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737602
NSN
5962-01-473-7602
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-19
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737603
NSN
5962-01-473-7603
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-16
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737604
NSN
5962-01-473-7604
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737605
NSN
5962-01-473-7605
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-17
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737606
NSN
5962-01-473-7606
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-22
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737607
NSN
5962-01-473-7607
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-20
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737608
NSN
5962-01-473-7608
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-21
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737609
NSN
5962-01-473-7609
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-23
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737610
NSN
5962-01-473-7610
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-4
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737611
NSN
5962-01-473-7611
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737612
NSN
5962-01-473-7612
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-9
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737613
NSN
5962-01-473-7613
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
2425925-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014737615
NSN
5962-01-473-7615
MFG
RAYTHEON COMPANY
Description
PART NAME ASSIGNED BY CONTROLLING AGENCY: DIGITAL MICROPROCESSOR, PERIPHERAL
Related Searches:
2426037-0001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014737616
NSN
5962-01-473-7616
MFG
RAYTHEON COMPANY
Description
PART NAME ASSIGNED BY CONTROLLING AGENCY: IC DIGITAL, ECL, ARITHMETIC CIRCUITS
Related Searches:
2428879-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014737618
NSN
5962-01-473-7618
MFG
RAYTHEON COMPANY
Description
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
Related Searches:
2699141-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014737631
NSN
5962-01-473-7631
MFG
RAYTHEON COMPANY
Description
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT DIGITAL, (54ALS38), NAND
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
Related Searches:
SN74ALS240-1N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014737678
NSN
5962-01-473-7678
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 3 DRIVER, MEMORY ADDRESS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL HIGH INPUT LOGIC LEVEL THREE STATE
Related Searches:
SN74ALS240A-1N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014737678
NSN
5962-01-473-7678
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 3 DRIVER, MEMORY ADDRESS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL HIGH INPUT LOGIC LEVEL THREE STATE
Related Searches:
2424043-0001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014738172
NSN
5962-01-473-8172
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,DIGITAL