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5962-01-506-3484
20 Products
EPM7128ATC100-7F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063484
NSN
5962-01-506-3484
MFG
ALTERA CORPORATION
Description
III END ITEM IDENTIFICATION: USED IN 114E647G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
MEMORY CAPACITY: 2500 USABLE GATES
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MAX 7000A PROGRAMMABLE LOGIC DEVICE
SPECIAL FEATURES: 7 SPEED GRADE, USE 356A1275P1.POF TO PROGRAM 356A1409P9 -
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
356A1289P3.JED
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063280
NSN
5962-01-506-3280
MFG
BAE SYSTEMS CONTROLS INC.
Description
FEATURES PROVIDED: ELECTRICALLY ALTERABLE AND PROGRAMMABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICRCOCICUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
SPECIAL FEATURES: USE PROGRAM 356A1289P3.JED TO PROGRAM 356A1409P16 OR ATF22V10BQ-15JC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 J-HOOK
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
356A1409
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063280
NSN
5962-01-506-3280
MFG
BAE SYSTEMS CONTROLS INC.
Description
FEATURES PROVIDED: ELECTRICALLY ALTERABLE AND PROGRAMMABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICRCOCICUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
SPECIAL FEATURES: USE PROGRAM 356A1289P3.JED TO PROGRAM 356A1409P16 OR ATF22V10BQ-15JC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 J-HOOK
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
356A1409P16
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063280
NSN
5962-01-506-3280
MFG
BAE SYSTEMS CONTROLS INC.
Description
FEATURES PROVIDED: ELECTRICALLY ALTERABLE AND PROGRAMMABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICRCOCICUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
SPECIAL FEATURES: USE PROGRAM 356A1289P3.JED TO PROGRAM 356A1409P16 OR ATF22V10BQ-15JC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 J-HOOK
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
ATF22V10BQ-15JC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063280
NSN
5962-01-506-3280
MFG
ATMEL CORPORATION
Description
FEATURES PROVIDED: ELECTRICALLY ALTERABLE AND PROGRAMMABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICRCOCICUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
SPECIAL FEATURES: USE PROGRAM 356A1289P3.JED TO PROGRAM 356A1409P16 OR ATF22V10BQ-15JC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 J-HOOK
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063280
NSN
5962-01-506-3280
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: ELECTRICALLY ALTERABLE AND PROGRAMMABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICRCOCICUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
SPECIAL FEATURES: USE PROGRAM 356A1289P3.JED TO PROGRAM 356A1409P16 OR ATF22V10BQ-15JC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 J-HOOK
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
356A1289P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063301
NSN
5962-01-506-3301
MFG
BAE SYSTEMS CONTROLS INC.
Description
FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOKITHIC SILICON
SPECIAL FEATURES: USE PROGRAM 356A1289P1.JED TO PROGRAM 356A1409P16 OR ATF22V10BQ-15JC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 J-HOOK
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MINIMUM TOTAL SUPPLY
Related Searches:
356A1409P16
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063301
NSN
5962-01-506-3301
MFG
BAE SYSTEMS CONTROLS INC.
Description
FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOKITHIC SILICON
SPECIAL FEATURES: USE PROGRAM 356A1289P1.JED TO PROGRAM 356A1409P16 OR ATF22V10BQ-15JC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 J-HOOK
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MINIMUM TOTAL SUPPLY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063301
NSN
5962-01-506-3301
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: PROGRAMMED
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOKITHIC SILICON
SPECIAL FEATURES: USE PROGRAM 356A1289P1.JED TO PROGRAM 356A1409P16 OR ATF22V10BQ-15JC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 J-HOOK
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MINIMUM TOTAL SUPPLY
Related Searches:
6012264-002
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962015063323
NSN
5962-01-506-3323
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
BODY HEIGHT: 0.450 INCHES NOMINAL
BODY LENGTH: 1.000 INCHES NOMINAL
BODY WIDTH: 1.000 INCHES NOMINAL
CRITICALITY CODE JUSTIFICATION: CBBL
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL OUTPUT AND 10.00 MILLIAMPERES NOMINAL STAND-BY
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
HYBRID TECHNOLOGY TYPE: MULTICHIP
III END ITEM IDENTIFICATION: F-16C/D AVIONICS TEST SET (AISI) 4920-01-495-9100
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM POWER DISSIPATION RATING: 10.0 WATTS
OPERATING TEMP RANGE: -40.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: NON-ISOLATED, 5V TO 3.3V, 3A DC/DC CONVERTER
SPECIAL FEATURES: LOGIC INPUT CONTROLLED ON/OFF (TTL HIGH=ON), 2OOKHZ SWITCHING FREQ.
STORAGE TEMP RANGE: -40.0 TO 105.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 6 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM ABSOLUTE INPUT AND 4.75 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE AND 3.3 VOLTS NOMINAL OUTPUT
Related Searches:
UNR-3.3/3-D5
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962015063323
NSN
5962-01-506-3323
MFG
MURATA POWER SOLUTIONS INC.
Description
BODY HEIGHT: 0.450 INCHES NOMINAL
BODY LENGTH: 1.000 INCHES NOMINAL
BODY WIDTH: 1.000 INCHES NOMINAL
CRITICALITY CODE JUSTIFICATION: CBBL
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES NOMINAL OUTPUT AND 10.00 MILLIAMPERES NOMINAL STAND-BY
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
HYBRID TECHNOLOGY TYPE: MULTICHIP
III END ITEM IDENTIFICATION: F-16C/D AVIONICS TEST SET (AISI) 4920-01-495-9100
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM POWER DISSIPATION RATING: 10.0 WATTS
OPERATING TEMP RANGE: -40.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: NON-ISOLATED, 5V TO 3.3V, 3A DC/DC CONVERTER
SPECIAL FEATURES: LOGIC INPUT CONTROLLED ON/OFF (TTL HIGH=ON), 2OOKHZ SWITCHING FREQ.
STORAGE TEMP RANGE: -40.0 TO 105.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 6 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM ABSOLUTE INPUT AND 4.75 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE AND 3.3 VOLTS NOMINAL OUTPUT
Related Searches:
356A1409
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063333
NSN
5962-01-506-3333
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 1.500 MILLIMETERS NOMINAL
BODY LENGTH: 20.100 MILLIMETERS NOMINAL
BODY WIDTH: 14.000 MILLIMETERS NOMINAL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND SYNCHRONOUS AND HIGH SPEED AND LOW POWER AND POSITIVE EDGE TRIGGERED AND ASYNCHRONOUS
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: PLASTIC
MEMORY CAPACITY: 3.3 V I/O MEMORY 128KX36
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 4MB FLOW-THROUGH SYNCBURST SRAM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM INPUT AND 4.6 VOLTS MAXIMUM INPUT
Related Searches:
356A1409P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063333
NSN
5962-01-506-3333
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 1.500 MILLIMETERS NOMINAL
BODY LENGTH: 20.100 MILLIMETERS NOMINAL
BODY WIDTH: 14.000 MILLIMETERS NOMINAL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND SYNCHRONOUS AND HIGH SPEED AND LOW POWER AND POSITIVE EDGE TRIGGERED AND ASYNCHRONOUS
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: PLASTIC
MEMORY CAPACITY: 3.3 V I/O MEMORY 128KX36
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 4MB FLOW-THROUGH SYNCBURST SRAM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM INPUT AND 4.6 VOLTS MAXIMUM INPUT
Related Searches:
89954-356A1409P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063333
NSN
5962-01-506-3333
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 1.500 MILLIMETERS NOMINAL
BODY LENGTH: 20.100 MILLIMETERS NOMINAL
BODY WIDTH: 14.000 MILLIMETERS NOMINAL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND SYNCHRONOUS AND HIGH SPEED AND LOW POWER AND POSITIVE EDGE TRIGGERED AND ASYNCHRONOUS
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: PLASTIC
MEMORY CAPACITY: 3.3 V I/O MEMORY 128KX36
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 4MB FLOW-THROUGH SYNCBURST SRAM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM INPUT AND 4.6 VOLTS MAXIMUM INPUT
Related Searches:
MT58L128L36PT-7.5
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063333
NSN
5962-01-506-3333
MT58L128L36PT-7.5
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063333
NSN
5962-01-506-3333
MFG
MICRON TECHNOLOGY INC.
Description
BODY HEIGHT: 1.500 MILLIMETERS NOMINAL
BODY LENGTH: 20.100 MILLIMETERS NOMINAL
BODY WIDTH: 14.000 MILLIMETERS NOMINAL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND SYNCHRONOUS AND HIGH SPEED AND LOW POWER AND POSITIVE EDGE TRIGGERED AND ASYNCHRONOUS
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: PLASTIC
MEMORY CAPACITY: 3.3 V I/O MEMORY 128KX36
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 4MB FLOW-THROUGH SYNCBURST SRAM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM INPUT AND 4.6 VOLTS MAXIMUM INPUT
Related Searches:
6012780-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063337
NSN
5962-01-506-3337
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
BODY LENGTH: 4.9 MILLIMETERS MINIMUM AND 5.1 MILLIMETERS MAXIMUM
BODY WIDTH: 4.3 MILLIMETERS MINIMUM AND 4.5 MILLIMETERS MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 10.00 INPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 4 GATE, LOGIC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 4920-01-495-9100 TEST STATION F16-C/D
III OVERALL HEIGHT: 1.2 MILLIMETERS MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: QUADRUPLE 2-INPUT POSTIVE-AND GATES
SPECIAL FEATURES: TTL COMPATABLE INPUTS
TERMINAL TYPE AND QUANTITY: 14 GULLWING
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74AHCT08PW
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063337
NSN
5962-01-506-3337
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY LENGTH: 4.9 MILLIMETERS MINIMUM AND 5.1 MILLIMETERS MAXIMUM
BODY WIDTH: 4.3 MILLIMETERS MINIMUM AND 4.5 MILLIMETERS MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 10.00 INPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 4 GATE, LOGIC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 4920-01-495-9100 TEST STATION F16-C/D
III OVERALL HEIGHT: 1.2 MILLIMETERS MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: QUADRUPLE 2-INPUT POSTIVE-AND GATES
SPECIAL FEATURES: TTL COMPATABLE INPUTS
TERMINAL TYPE AND QUANTITY: 14 GULLWING
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
356A1275P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063484
NSN
5962-01-506-3484
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: USED IN 114E647G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
MEMORY CAPACITY: 2500 USABLE GATES
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MAX 7000A PROGRAMMABLE LOGIC DEVICE
SPECIAL FEATURES: 7 SPEED GRADE, USE 356A1275P1.POF TO PROGRAM 356A1409P9 -
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
356A1275P1.POF
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063484
NSN
5962-01-506-3484
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: USED IN 114E647G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
MEMORY CAPACITY: 2500 USABLE GATES
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MAX 7000A PROGRAMMABLE LOGIC DEVICE
SPECIAL FEATURES: 7 SPEED GRADE, USE 356A1275P1.POF TO PROGRAM 356A1409P9 -
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
356A1409P9
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063484
NSN
5962-01-506-3484
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: USED IN 114E647G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
MEMORY CAPACITY: 2500 USABLE GATES
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MAX 7000A PROGRAMMABLE LOGIC DEVICE
SPECIAL FEATURES: 7 SPEED GRADE, USE 356A1275P1.POF TO PROGRAM 356A1409P9 -
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
