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5980-00-066-8092

20 Products

LS222

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000668092

NSN

5980-00-066-8092

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LS222

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000668092

NSN

5980-00-066-8092

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

MANUFACTURERS CODE: 54089
MFR SOURCE CONTROLLING REFERENCE: 15813
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

856Y

PHOTOELECTRIC CELL

NSN, MFG P/N

5980000710561

NSN

5980-00-071-0561

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856Y

PHOTOELECTRIC CELL

NSN, MFG P/N

5980000710561

NSN

5980-00-071-0561

MFG

SOLARTRON ELECTRONICS INC WESTON INSTRUMENTS DIV

Description

INCLOSURE MATERIAL: METAL
MOUNTING CONFIGURATION: TWO NO. 8-32 THD MTG STUDS SPACED 1 IN. C TO C
MOUNTING METHOD: STUD
OUTPUT SENSITIVITY RATING: 2.5 UA SENSITIBITY PER FOOT-CANDLE
OVERALL DIAMETER: 2.000 INCHES NOMINAL
OVERALL LENGTH: 0.810 INCHES NOMINAL
TERMINAL QUANTITY: 2
TERMINAL TYPE: STUD W/TERMINAL LUG
USAGE DESIGN: OUTDOOR

13208E8404

PHOTOELECTRIC CELL

NSN, MFG P/N

5980000730034

NSN

5980-00-073-0034

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13208E8404

PHOTOELECTRIC CELL

NSN, MFG P/N

5980000730034

NSN

5980-00-073-0034

MFG

CECOM LR CENTER

077437

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000738041

NSN

5980-00-073-8041

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077437

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000738041

NSN

5980-00-073-8041

MFG

MAGNA-TECH ELECTRONIC CO. INC.

Description

DESIGN CONTROL REFERENCE: 077437
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 60807
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

AQ2-3-1N2175

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000738041

NSN

5980-00-073-8041

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AQ2-3-1N2175

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000738041

NSN

5980-00-073-8041

MFG

BELL AND HOWELL PHILLIPSBURG CO CORPORATE OFFICES

Description

DESIGN CONTROL REFERENCE: 077437
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 60807
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:

1990-0042

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

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1990-0042

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

1N4378

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

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1N4378

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

353-0291-010

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

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353-0291-010

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

8566378

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

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8566378

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

DMS 81082B

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

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DMS 81082B

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

GS2020-3

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

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GS2020-3

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

MFG

MICROPAC INDUSTRIES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

L01308

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

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L01308

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

LS400

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

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LS400

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

RELEASE4679

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

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RELEASE4679

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980000789592

NSN

5980-00-078-9592

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MICROAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.081 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.300 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED

B2166-2040G1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5980000879267

NSN

5980-00-087-9267

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B2166-2040G1

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5980000879267

NSN

5980-00-087-9267

MFG

DI-AN CONTROLS INC

02031

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

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02031

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

MFG

MOTOROLA/CODEX CORP SUB OF MOTOROLA INC

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: SIX LEAD,PLASTIC DUAL-IN-LINE PKG,0.340 IN. L,0.250 IN. W,0.120 IN. H

1301348

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

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1301348

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

MFG

RAMTEK CORP

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: SIX LEAD,PLASTIC DUAL-IN-LINE PKG,0.340 IN. L,0.250 IN. W,0.120 IN. H

1596215518S

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

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1596215518S

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

MFG

SMA SEGNALAMENTO MARITTIMO AEREO AZIENDA DELLA GF - GALILEO SMA SRL

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: SIX LEAD,PLASTIC DUAL-IN-LINE PKG,0.340 IN. L,0.250 IN. W,0.120 IN. H

19-100

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

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19-100

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

MFG

PALOMAR PRODUCTS INC.

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: SIX LEAD,PLASTIC DUAL-IN-LINE PKG,0.340 IN. L,0.250 IN. W,0.120 IN. H

1SPS353177

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

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1SPS353177

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980000988032

NSN

5980-00-098-8032

MFG

HAZLETINE CORP INDUSTRIAL PRODUCTS DIV

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: SIX LEAD,PLASTIC DUAL-IN-LINE PKG,0.340 IN. L,0.250 IN. W,0.120 IN. H