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5980-00-603-7866

20 Products

Y7430

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

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Y7430

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

MFG

THALES UK LIMITED

Description

COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 3.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: CURRENT LIMITING RESISTOR
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM FORWARD VOLTAGE, DC AND 7.0 MAXIMUM REVERSE VOLTAGE, DC

813300

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

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813300

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

MFG

IMED CORP

Description

COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 3.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: CURRENT LIMITING RESISTOR
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM FORWARD VOLTAGE, DC AND 7.0 MAXIMUM REVERSE VOLTAGE, DC

851378-1

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

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851378-1

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 3.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: CURRENT LIMITING RESISTOR
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM FORWARD VOLTAGE, DC AND 7.0 MAXIMUM REVERSE VOLTAGE, DC

91330021

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

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91330021

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

MFG

THALES SYSTEMES AEROPORTES S.A

Description

COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 3.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: CURRENT LIMITING RESISTOR
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM FORWARD VOLTAGE, DC AND 7.0 MAXIMUM REVERSE VOLTAGE, DC

GS810JA1

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

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GS810JA1

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS

Description

COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 3.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: CURRENT LIMITING RESISTOR
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM FORWARD VOLTAGE, DC AND 7.0 MAXIMUM REVERSE VOLTAGE, DC

HLMP-0280

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

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HLMP-0280

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

MFG

AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER

Description

COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 3.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: CURRENT LIMITING RESISTOR
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM FORWARD VOLTAGE, DC AND 7.0 MAXIMUM REVERSE VOLTAGE, DC

HP5082-4860

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

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HP5082-4860

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

MFG

HEWLETT PACKARD CO

Description

COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 3.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: CURRENT LIMITING RESISTOR
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM FORWARD VOLTAGE, DC AND 7.0 MAXIMUM REVERSE VOLTAGE, DC

Q 5 3178 7026

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

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Q 5 3178 7026

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006037866

NSN

5980-00-603-7866

MFG

RHEINMETALL SOLDIER ELECTRONICS GMBH

Description

COLOR TONE PRODUCED PER SOURCE: RED LENS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 3.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: CURRENT LIMITING RESISTOR
TERMINAL LENGTH: 0.650 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM FORWARD VOLTAGE, DC AND 7.0 MAXIMUM REVERSE VOLTAGE, DC

1990-0408

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006077359

NSN

5980-00-607-7359

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1990-0408

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006077359

NSN

5980-00-607-7359

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

OVERALL HEIGHT: 0.115 INCHES MAXIMUM
OVERALL LENGTH: 1.990 INCHES MAXIMUM
OVERALL WIDTH: 0.560 INCHES MAXIMUM
SPECIAL FEATURES: DIODE IS ENCASED

175-0002

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

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175-0002

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

MFG

AUTEK SYSTEMS CORP

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: CONSISTS OF A GALLIUM ARSENIDE LIGHT EMITTING DIODE OPTICALLY COUPLED TO A SILICON NPN PHOTO TRANSISTOR,SIX LEAD DUAL-IN-LINE PKG,ENCAPSULATED IN A NONCONDUCTIVE PLASTIC CASE,0.360 IN. LG,0.250 IN. W,0.200 IN. H,COLLECTOR-BASE VOLTAGE
III STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
~1: 30V,EMITTER-COLLECTOR VOLTAGE 4V,EMITTER-BASE VOLTAGE 4V,INPUT-DIODE REVERSE VOLTAGE 3V

2742-3730777

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

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2742-3730777

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

MFG

MOSELEY ASSOCIATES INC

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: CONSISTS OF A GALLIUM ARSENIDE LIGHT EMITTING DIODE OPTICALLY COUPLED TO A SILICON NPN PHOTO TRANSISTOR,SIX LEAD DUAL-IN-LINE PKG,ENCAPSULATED IN A NONCONDUCTIVE PLASTIC CASE,0.360 IN. LG,0.250 IN. W,0.200 IN. H,COLLECTOR-BASE VOLTAGE
III STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
~1: 30V,EMITTER-COLLECTOR VOLTAGE 4V,EMITTER-BASE VOLTAGE 4V,INPUT-DIODE REVERSE VOLTAGE 3V

T1L112

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

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T1L112

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

MFG

GSE HOLDINGS INC. DBA ITW MILITARY GSE DIV ITW MILITARY GSE

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: CONSISTS OF A GALLIUM ARSENIDE LIGHT EMITTING DIODE OPTICALLY COUPLED TO A SILICON NPN PHOTO TRANSISTOR,SIX LEAD DUAL-IN-LINE PKG,ENCAPSULATED IN A NONCONDUCTIVE PLASTIC CASE,0.360 IN. LG,0.250 IN. W,0.200 IN. H,COLLECTOR-BASE VOLTAGE
III STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
~1: 30V,EMITTER-COLLECTOR VOLTAGE 4V,EMITTER-BASE VOLTAGE 4V,INPUT-DIODE REVERSE VOLTAGE 3V

TIL112

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

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TIL112

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: CONSISTS OF A GALLIUM ARSENIDE LIGHT EMITTING DIODE OPTICALLY COUPLED TO A SILICON NPN PHOTO TRANSISTOR,SIX LEAD DUAL-IN-LINE PKG,ENCAPSULATED IN A NONCONDUCTIVE PLASTIC CASE,0.360 IN. LG,0.250 IN. W,0.200 IN. H,COLLECTOR-BASE VOLTAGE
III STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
~1: 30V,EMITTER-COLLECTOR VOLTAGE 4V,EMITTER-BASE VOLTAGE 4V,INPUT-DIODE REVERSE VOLTAGE 3V

TIXL112

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

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TIXL112

COUPLER,OPTOELECTRONIC

NSN, MFG P/N

5980006079104

NSN

5980-00-607-9104

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

GENERAL CHARACTERISTICS ITEM DESCRIPTION: CONSISTS OF A GALLIUM ARSENIDE LIGHT EMITTING DIODE OPTICALLY COUPLED TO A SILICON NPN PHOTO TRANSISTOR,SIX LEAD DUAL-IN-LINE PKG,ENCAPSULATED IN A NONCONDUCTIVE PLASTIC CASE,0.360 IN. LG,0.250 IN. W,0.200 IN. H,COLLECTOR-BASE VOLTAGE
III STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
~1: 30V,EMITTER-COLLECTOR VOLTAGE 4V,EMITTER-BASE VOLTAGE 4V,INPUT-DIODE REVERSE VOLTAGE 3V

0N199598-2

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006155007

NSN

5980-00-615-5007

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0N199598-2

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006155007

NSN

5980-00-615-5007

MFG

NATIONAL SECURITY AGENCY

Description

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.234 INCHES NOMINAL
OVERALL LENGTH: 0.563 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

JM9151-001-810RC

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006155007

NSN

5980-00-615-5007

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JM9151-001-810RC

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006155007

NSN

5980-00-615-5007

MFG

SPECTRUM CONTROL INC.

Description

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
OVERALL DIAMETER: 0.234 INCHES NOMINAL
OVERALL LENGTH: 0.563 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

100385-001

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006156306

NSN

5980-00-615-6306

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100385-001

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006156306

NSN

5980-00-615-6306

MFG

CIPHER DATA PRODUCTS INC CSC FACILITY

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LUMINOUS INTENSITY: 800.0 MICROCANDELA MINIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 129.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC AND 3.0 MAXIMUM REVERSE VOLTAGE, DC

135563

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006156306

NSN

5980-00-615-6306

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135563

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006156306

NSN

5980-00-615-6306

MFG

HARRIS CORP DIGITAL TELEPHONE SYSTEMS DIV

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LUMINOUS INTENSITY: 800.0 MICROCANDELA MINIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 129.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC AND 3.0 MAXIMUM REVERSE VOLTAGE, DC

FLV112

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006156306

NSN

5980-00-615-6306

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FLV112

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006156306

NSN

5980-00-615-6306

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LUMINOUS INTENSITY: 800.0 MICROCANDELA MINIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 129.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC AND 3.0 MAXIMUM REVERSE VOLTAGE, DC

J94-0203

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006156306

NSN

5980-00-615-6306

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J94-0203

LIGHT EMITTING DIODE

NSN, MFG P/N

5980006156306

NSN

5980-00-615-6306

MFG

WARD LEONARD ELECTRIC CO INC

Description

COLOR TONE PRODUCED PER SOURCE: RED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
LUMINOUS INTENSITY: 800.0 MICROCANDELA MINIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 129.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.285 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC AND 3.0 MAXIMUM REVERSE VOLTAGE, DC