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5961-01-421-5656
20 Products
NAVY 1993 3288
RECTIFIER,BRIDGE,EL
NSN, MFG P/N
5961014215656
NSN
5961-01-421-5656
MFG
DEFENSE LOGISTICS AGENCY DIRECTORATE OF MEDICAL MATERIEL DEFENSE SUPPLY CENTER PHILADELPHIA
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NO TECH REVIEW OR CHARACTERISTICS DATA
Related Searches:
74B059443-201
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014213766
NSN
5961-01-421-3766
74B059443-201
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014213766
NSN
5961-01-421-3766
MFG
BOEING COMPANY THE DBA BOEING
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
1020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014213767
NSN
5961-01-421-3767
MFG
BALLARD COMMERCIAL INDUSTRIES INC. DBA B C I
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
918391
TRANSISTOR
NSN, MFG P/N
5961014214319
NSN
5961-01-421-4319
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.15 AMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: OSCILLOSCOPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 21.000 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 8.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 13.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
BD825
TRANSISTOR
NSN, MFG P/N
5961014214319
NSN
5961-01-421-4319
MFG
PHILIPS COMPONENTS
Description
CURRENT RATING PER CHARACTERISTIC: 0.15 AMPERES NOMINAL COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: OSCILLOSCOPE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-202
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 5.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 21.000 MILLIMETERS MAXIMUM
OVERALL WIDTH: 10.0 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 8.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 13.0 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
TRANSFER RATIO: 40.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
3164828-1
TRANSISTOR
NSN, MFG P/N
5961014214360
NSN
5961-01-421-4360
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: A/F-18-DCN
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THIS ITEM IS A JANTX2N2369A SUPPLIED WITH A M38527/01-35N MOUNTING PAD, AND LEADS BENT PER DRAWING
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
JANTX2N2369A
TRANSISTOR
NSN, MFG P/N
5961014214360
NSN
5961-01-421-4360
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
III END ITEM IDENTIFICATION: A/F-18-DCN
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THIS ITEM IS A JANTX2N2369A SUPPLIED WITH A M38527/01-35N MOUNTING PAD, AND LEADS BENT PER DRAWING
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
AT27123
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014215386
NSN
5961-01-421-5386
MFG
DEERE & CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
62-0257-001
RECTIFIER,BRIDGE,EL
NSN, MFG P/N
5961014215656
NSN
5961-01-421-5656
MFG
ASPEN LABS INC SUB OF ZIMMER INC
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NO TECH REVIEW OR CHARACTERISTICS DATA
Related Searches:
LLH404053
RECTIFIER,BRIDGE,EL
NSN, MFG P/N
5961014215656
NSN
5961-01-421-5656
MFG
NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NO TECH REVIEW OR CHARACTERISTICS DATA
Related Searches:
6390109
THERMISTOR ASSY,CUR
NSN, MFG P/N
5961014215703
NSN
5961-01-421-5703
MFG
DENTSPLY INTERNATIONAL INC. DBA TRUBYTE DIV DENTSPLY PROSTHETICS DIVISION AKA TRUBYTE
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NO TECH REVIEW OR CHARACTERISTICS DATA
Related Searches:
LLH407898
THERMISTOR ASSY,CUR
NSN, MFG P/N
5961014215703
NSN
5961-01-421-5703
MFG
NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NO TECH REVIEW OR CHARACTERISTICS DATA
Related Searches:
NAVY 1993 3306
THERMISTOR ASSY,CUR
NSN, MFG P/N
5961014215703
NSN
5961-01-421-5703
MFG
DEFENSE LOGISTICS AGENCY DIRECTORATE OF MEDICAL MATERIEL DEFENSE SUPPLY CENTER PHILADELPHIA
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NO TECH REVIEW OR CHARACTERISTICS DATA
Related Searches:
LLH377898
MODULE,TRIAC,STERIL
NSN, MFG P/N
5961014215730
NSN
5961-01-421-5730
MFG
NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NO TECH REVIEW OR CHARACTERISTICS DATA
Related Searches:
NAVY 1993 3356
MODULE,TRIAC,STERIL
NSN, MFG P/N
5961014215730
NSN
5961-01-421-5730
MFG
DEFENSE LOGISTICS AGENCY DIRECTORATE OF MEDICAL MATERIEL DEFENSE SUPPLY CENTER PHILADELPHIA
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NO TECH REVIEW OR CHARACTERISTICS DATA
Related Searches:
P-146653-021
MODULE,TRIAC,STERIL
NSN, MFG P/N
5961014215730
NSN
5961-01-421-5730
MFG
STERIS CORPORATION
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: NO TECH REVIEW OR CHARACTERISTICS DATA
Related Searches:
JANTXV1N6626
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014216987
NSN
5961-01-421-6987
JANTXV1N6626
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014216987
NSN
5961-01-421-6987
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6626
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/590
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.137 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-,IL-S19500/590 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.037 INCHES MINIMUM AND 0.042 INCHES MAXIMUM
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
5322 130 82199
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014217012
NSN
5961-01-421-7012
5322 130 82199
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014217012
NSN
5961-01-421-7012
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
CAPACITANCE RATING IN PICOFARADS: 1.9 NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR
Related Searches:
918938
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014217012
NSN
5961-01-421-7012
918938
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014217012
NSN
5961-01-421-7012
MFG
FLUKE CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 1.9 NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR
Related Searches:
9338 145 70212
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014217012
NSN
5961-01-421-7012
9338 145 70212
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014217012
NSN
5961-01-421-7012
MFG
FLUKE NEDERLAND BV
Description
CAPACITANCE RATING IN PICOFARADS: 1.9 NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR