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5962-01-157-3646

20 Products

NE5534AN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011573646

NSN

5962-01-157-3646

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NE5534AN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011573646

NSN

5962-01-157-3646

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.365 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH PERFORMANCE AND LOW NOISE AND INTERNALLY COMPENSATED
III END ITEM IDENTIFICATION: 6625-01-069-7318 METER,FREQUENCY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE

GM820APP1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573647

NSN

5962-01-157-3647

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GM820APP1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573647

NSN

5962-01-157-3647

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND COMPLEMENTARY OUTPUTS AND HIGH CURRENT AND HIGH IMPEDANCE AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN75158JG

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573647

NSN

5962-01-157-3647

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SN75158JG

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573647

NSN

5962-01-157-3647

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND COMPLEMENTARY OUTPUTS AND HIGH CURRENT AND HIGH IMPEDANCE AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

932903-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573648

NSN

5962-01-157-3648

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932903-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573648

NSN

5962-01-157-3648

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.490 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND W/CLOCK AND W/ENABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 260.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 FLAT LEADS
TEST DATA DOCUMENT: 82577-932903 STANDARD
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

DH15368

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573648

NSN

5962-01-157-3648

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DH15368

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573648

NSN

5962-01-157-3648

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.490 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND W/CLOCK AND W/ENABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 260.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 FLAT LEADS
TEST DATA DOCUMENT: 82577-932903 STANDARD
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

932913-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573649

NSN

5962-01-157-3649

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932913-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573649

NSN

5962-01-157-3649

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932913 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

DH15602

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573649

NSN

5962-01-157-3649

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DH15602

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573649

NSN

5962-01-157-3649

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932913 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

HL77914

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573649

NSN

5962-01-157-3649

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HL77914

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011573649

NSN

5962-01-157-3649

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932913 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

932864-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573650

NSN

5962-01-157-3650

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932864-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573650

NSN

5962-01-157-3650

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.293 INCHES MINIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY LID GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932864 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

DH10238

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573650

NSN

5962-01-157-3650

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DH10238

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573650

NSN

5962-01-157-3650

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.293 INCHES MINIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY LID GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932864 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

DMS89 134B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573650

NSN

5962-01-157-3650

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DMS89 134B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573650

NSN

5962-01-157-3650

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.293 INCHES MINIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY LID GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932864 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

HL31865

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573650

NSN

5962-01-157-3650

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HL31865

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573650

NSN

5962-01-157-3650

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.293 INCHES MINIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY LID GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932864 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

82S09

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573651

NSN

5962-01-157-3651

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82S09

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573651

NSN

5962-01-157-3651

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 576
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.380 INCHES MINIMUM AND 1.430 INCHES MAXIMUM
BODY WIDTH: 0.570 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND W/ENABLE AND W/OPEN COLLECTOR AND SCHOTTKY
III END ITEM IDENTIFICATION: CENTRAL OFFICE TYPE AN/TTC-39
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-838094 DRAWING
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

82S09/BXA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573651

NSN

5962-01-157-3651

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82S09/BXA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573651

NSN

5962-01-157-3651

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 576
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.380 INCHES MINIMUM AND 1.430 INCHES MAXIMUM
BODY WIDTH: 0.570 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND W/ENABLE AND W/OPEN COLLECTOR AND SCHOTTKY
III END ITEM IDENTIFICATION: CENTRAL OFFICE TYPE AN/TTC-39
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-838094 DRAWING
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

C72067-Z9000-M9

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573651

NSN

5962-01-157-3651

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C72067-Z9000-M9

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573651

NSN

5962-01-157-3651

MFG

SIEMENS AG AUTOMATISIERUNGSTECHNIK AUT A13

Description

(NON-CORE DATA) BIT QUANTITY: 576
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.380 INCHES MINIMUM AND 1.430 INCHES MAXIMUM
BODY WIDTH: 0.570 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND W/ENABLE AND W/OPEN COLLECTOR AND SCHOTTKY
III END ITEM IDENTIFICATION: CENTRAL OFFICE TYPE AN/TTC-39
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-838094 DRAWING
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SM-A-838094-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573651

NSN

5962-01-157-3651

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SM-A-838094-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573651

NSN

5962-01-157-3651

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

(NON-CORE DATA) BIT QUANTITY: 576
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.380 INCHES MINIMUM AND 1.430 INCHES MAXIMUM
BODY WIDTH: 0.570 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND W/ENABLE AND W/OPEN COLLECTOR AND SCHOTTKY
III END ITEM IDENTIFICATION: CENTRAL OFFICE TYPE AN/TTC-39
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-838094 DRAWING
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

70D184202-2001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011573943

NSN

5962-01-157-3943

View More Info

70D184202-2001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011573943

NSN

5962-01-157-3943

MFG

BOEING COMPANY THE DBA BOEING

Description

DESIGN CONTROL REFERENCE: 70D184202-2001
FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: GLCM WCS MAINT
MANUFACTURERS CODE: 76301
SPECIAL FEATURES: CFU/SCP
THE MANUFACTURERS DATA:

70D184202-2003

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573944

NSN

5962-01-157-3944

View More Info

70D184202-2003

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573944

NSN

5962-01-157-3944

MFG

BOEING COMPANY THE DBA BOEING

Description

DESIGN CONTROL REFERENCE: 70D184202-2003
FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: GLCM(PACER FRAME) WCS MAINT
MANUFACTURERS CODE: 76301
THE MANUFACTURERS DATA:

70D184202-2005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573945

NSN

5962-01-157-3945

View More Info

70D184202-2005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573945

NSN

5962-01-157-3945

MFG

BOEING COMPANY THE DBA BOEING

Description

DESIGN CONTROL REFERENCE: 70D184202-2005
FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: GLCM(PACER FRAME)WCS MAINT
MANUFACTURERS CODE: 76301
SPECIAL FEATURES: CFU/SCP
THE MANUFACTURERS DATA:

70D184202-2007

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573946

NSN

5962-01-157-3946

View More Info

70D184202-2007

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011573946

NSN

5962-01-157-3946

MFG

BOEING COMPANY THE DBA BOEING

Description

DESIGN CONTROL REFERENCE: 70D184202-2007
FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: GLCM(PACER FRAME)WCS MAINT
MANUFACTURERS CODE: 76301
THE MANUFACTURERS DATA: