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5962-00-824-4637
20 Products
U3I993059X
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008244637
NSN
5962-00-824-4637
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MC830F
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5962008244637
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FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MIC930-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008244637
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5962-00-824-4637
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ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MIC930-5B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008244637
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5962-00-824-4637
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ITT SEMICONDUCTORS DIV
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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PL9930-59
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NSN, MFG P/N
5962008244637
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PHILCO-FORD CORP MICROELECTRONICS DIV
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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SN15830H
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008244637
NSN
5962-00-824-4637
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TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008244637
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5962-00-824-4637
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TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND MEDIUM POWER AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 34.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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2603797-8
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008244640
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ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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L-3 COMMUNICATIONS CORPORATION D IV INTEGRATED SYSTEMS - GREENVILLE
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
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ITT SEMICONDUCTORS DIV
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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PHILCO-FORD CORP MICROELECTRONICS DIV
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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NSN, MFG P/N
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TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
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FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.065 INCHES NOMINAL
BODY LENGTH: 0.265 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
SPECIAL FEATURES: QUAD 2-INPUT NAND/NOR GATE,HERMETICALLY SEALED
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
