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5962-00-374-9916
20 Products
V00251-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN2161
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN2458A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN5400
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN5400F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN5400FMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN5400S
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN5400S17
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN5400W
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN6743
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN7400F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SNC5400S00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SNC5400WA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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TIC12059F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
UEA2306
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
UEF2306
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749916
NSN
5962-00-374-9916
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00104BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/1 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 27.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
351-7365-122
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749981
NSN
5962-00-374-9981
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER, DIGITAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND MEDIUM SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 24.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 13499-351-7365 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DM54L04W/833
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749981
NSN
5962-00-374-9981
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER, DIGITAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND MEDIUM SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 24.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 13499-351-7365 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
GEM257201BDA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749981
NSN
5962-00-374-9981
MFG
SARNOFF CORPORATION
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER, DIGITAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND MEDIUM SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 24.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 13499-351-7365 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SD9466A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962003749981
NSN
5962-00-374-9981
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER, DIGITAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND MEDIUM SPEED AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 24.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 13499-351-7365 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
