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5962-01-019-8650

20 Products

DG175AA2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198650

NSN

5962-01-019-8650

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DG175AA2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198650

NSN

5962-01-019-8650

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG, SINGLE POLE DOUBLE THROW AND 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND COMPATIBLE DTL AND COMPATIBLE RTL AND HERMETICALLY SEALED AND MONOLITHIC
III OVERALL HEIGHT: 0.665 INCHES MINIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

SC7020PK

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198643

NSN

5962-01-019-8643

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SC7020PK

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198643

NSN

5962-01-019-8643

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, R-S, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND HIGH SPEED AND INTERNALLY COMPENSATED AND W/ENABLE AND NEGATIVE EDGE TRIGGERED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 140.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 6.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -10.0 VOLTS MINIMUM POWER SOURCE

2498395-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198644

NSN

5962-01-019-8644

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2498395-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198644

NSN

5962-01-019-8644

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED, MASTER SLAVE
FEATURES PROVIDED: ASYNCHRONOUS AND SYNCHRONOUS AND W/BUFFERED OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 10001-2498395 DRAWING
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

MIC948-1D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198644

NSN

5962-01-019-8644

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MIC948-1D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198644

NSN

5962-01-019-8644

MFG

ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED, MASTER SLAVE
FEATURES PROVIDED: ASYNCHRONOUS AND SYNCHRONOUS AND W/BUFFERED OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 10001-2498395 DRAWING
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

SW948-1P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198644

NSN

5962-01-019-8644

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SW948-1P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198644

NSN

5962-01-019-8644

MFG

STEWART-WARNER CORP MICROCIRCUITS DIV

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED, MASTER SLAVE
FEATURES PROVIDED: ASYNCHRONOUS AND SYNCHRONOUS AND W/BUFFERED OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 10001-2498395 DRAWING
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

U6A994851X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198644

NSN

5962-01-019-8644

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U6A994851X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198644

NSN

5962-01-019-8644

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K/R-S, CLOCKED, MASTER SLAVE
FEATURES PROVIDED: ASYNCHRONOUS AND SYNCHRONOUS AND W/BUFFERED OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 10001-2498395 DRAWING
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

2508634-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198645

NSN

5962-01-019-8645

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2508634-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198645

NSN

5962-01-019-8645

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, LOGIC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
III OVERALL HEIGHT: 0.300 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 10001-2508634 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

946-1P6

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198645

NSN

5962-01-019-8645

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946-1P6

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198645

NSN

5962-01-019-8645

MFG

STEWART-WARNER CORP MICROCIRCUITS DIV

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, LOGIC
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
III OVERALL HEIGHT: 0.300 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 10001-2508634 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

17565

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198646

NSN

5962-01-019-8646

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17565

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198646

NSN

5962-01-019-8646

MFG

NAVAL ELECTRONIC SYSTEMS SECURITY ENGINEERING CENTER

Description

DESIGN CONTROL REFERENCE: 17565
III OVERALL LENGTH: 0.470 INCHES NOMINAL
MANUFACTURERS CODE: 02227
THE MANUFACTURERS DATA:

72-00291-115

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198650

NSN

5962-01-019-8650

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72-00291-115

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198650

NSN

5962-01-019-8650

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG, SINGLE POLE DOUBLE THROW AND 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND COMPATIBLE DTL AND COMPATIBLE RTL AND HERMETICALLY SEALED AND MONOLITHIC
III OVERALL HEIGHT: 0.665 INCHES MINIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 450.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

6040007-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

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6040007-002

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

MFG

MICROSEMI CORP.-POWER MANAGEMENT GROUP HOLDING DBA BABCOCK

Description

(NON-CORE DATA) BIT QUANTITY: 2
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 220.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 34217-6040007 DRAWING
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

DM54121J/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

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DM54121J/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 2
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 220.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 34217-6040007 DRAWING
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

F54121DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

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F54121DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 2
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 220.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 34217-6040007 DRAWING
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

RB54121F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

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RB54121F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 2
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 220.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 34217-6040007 DRAWING
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SNC54121J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

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SNC54121J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198652

NSN

5962-01-019-8652

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 2
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE EDGE TRIGGERED AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 220.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 34217-6040007 DRAWING
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

971037-211

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198655

NSN

5962-01-019-8655

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971037-211

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010198655

NSN

5962-01-019-8655

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

BODY HEIGHT: 0.355 INCHES NOMINAL
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 971037-211
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 06481
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: DUAL MEMORY DRIVER,ABSOLUTE MAX RATINGS FIRST SUPPLY VOLTAGE RANGE MINUS 0.5 TO 7.0 V,SECOND VOLTAGE RANGE MINUS 0.5 TO 25 V,INPUT VOLTAGE RANGE MINUS 0.5 TO 5.5 V,MAX PACKAGE DISSIPATION 800 MW,METHOD OF POLARIZATION A NOTCH OR A DOT ADJACENT TO PIN ONE
THE MANUFACTURERS DATA:

1219-583

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010199231

NSN

5962-01-019-9231

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1219-583

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010199231

NSN

5962-01-019-9231

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE
III END ITEM IDENTIFICATION: AIRCRAFT MODEL A-6E
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 72314
MFR SOURCE CONTROLLING REFERENCE: 1219-583
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:

9614DM

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010199231

NSN

5962-01-019-9231

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9614DM

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010199231

NSN

5962-01-019-9231

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE
III END ITEM IDENTIFICATION: AIRCRAFT MODEL A-6E
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 72314
MFR SOURCE CONTROLLING REFERENCE: 1219-583
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:

2667585-1

INTEGRATED CIRCUIT

NSN, MFG P/N

5962010199253

NSN

5962-01-019-9253

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2667585-1

INTEGRATED CIRCUIT

NSN, MFG P/N

5962010199253

NSN

5962-01-019-9253

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

SN75577

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010199620

NSN

5962-01-019-9620

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SN75577

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010199620

NSN

5962-01-019-9620

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP