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5962-01-010-1429

20 Products

U7B961551M

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101429

NSN

5962-01-010-1429

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U7B961551M

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101429

NSN

5962-01-010-1429

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8874501FA
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-88745
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 SPECIFICATION
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

SN55115S

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101429

NSN

5962-01-010-1429

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SN55115S

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101429

NSN

5962-01-010-1429

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8874501FA
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-88745
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 SPECIFICATION
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

U4L961551X

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101429

NSN

5962-01-010-1429

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U4L961551X

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101429

NSN

5962-01-010-1429

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8874501FA
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-88745
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 SPECIFICATION
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

703BE004

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101430

NSN

5962-01-010-1430

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703BE004

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101430

NSN

5962-01-010-1430

MFG

TELCOM SEMICONDUCTOR INC

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, RADIO FREQUENCY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 99971-7531413 SPECIFICATION

7531413P0002

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101430

NSN

5962-01-010-1430

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7531413P0002

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101430

NSN

5962-01-010-1430

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, RADIO FREQUENCY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 99971-7531413 SPECIFICATION

7531413P2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101430

NSN

5962-01-010-1430

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7531413P2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101430

NSN

5962-01-010-1430

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, RADIO FREQUENCY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 99971-7531413 SPECIFICATION

HL8976

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101430

NSN

5962-01-010-1430

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HL8976

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101430

NSN

5962-01-010-1430

MFG

CHALLENGER METAL PRODUCTS CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, RADIO FREQUENCY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 99971-7531413 SPECIFICATION

1H5019CPA

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101431

NSN

5962-01-010-1431

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1H5019CPA

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101431

NSN

5962-01-010-1431

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

BODY HEIGHT: 0.128 INCHES MINIMUM AND 0.132 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND LOW LEVEL AND W/FIELD EFFECT TRANSISTOR SWITCH AND EXTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

IH5019CPA

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101431

NSN

5962-01-010-1431

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IH5019CPA

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101431

NSN

5962-01-010-1431

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

BODY HEIGHT: 0.128 INCHES MINIMUM AND 0.132 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.390 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND LOW LEVEL AND W/FIELD EFFECT TRANSISTOR SWITCH AND EXTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

058-002198

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

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058-002198

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-015-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, EXCLUSIVE OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN74159

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

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SN74159

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-015-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, EXCLUSIVE OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN74159N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

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SN74159N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-015-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, EXCLUSIVE OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNC54159J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

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SNC54159J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-015-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, EXCLUSIVE OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNC54159J00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

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SNC54159J00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101432

NSN

5962-01-010-1432

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
BODY LENGTH: 1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-015-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, EXCLUSIVE OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 36.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

82826B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101437

NSN

5962-01-010-1437

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82826B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101437

NSN

5962-01-010-1437

MFG

HARRIS CORP FINDLAY OPNS

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, BILATERAL
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

932368-1B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101437

NSN

5962-01-010-1437

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932368-1B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010101437

NSN

5962-01-010-1437

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, BILATERAL
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

81645

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101438

NSN

5962-01-010-1438

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81645

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101438

NSN

5962-01-010-1438

MFG

HARRIS CORP FINDLAY OPNS

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.325 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 932367-1B
DESIGN FUNCTION AND QUANTITY: 4 LATCH, NAND, R/S
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND RESETTABLE AND PRESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MANUFACTURERS CODE: 82577
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

932367-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101438

NSN

5962-01-010-1438

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932367-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101438

NSN

5962-01-010-1438

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.325 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 932367-1B
DESIGN FUNCTION AND QUANTITY: 4 LATCH, NAND, R/S
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND RESETTABLE AND PRESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MANUFACTURERS CODE: 82577
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

351-7533-020

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101439

NSN

5962-01-010-1439

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351-7533-020

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101439

NSN

5962-01-010-1439

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-7533-022A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 176.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TEST DATA DOCUMENT: 13499-351-7533 DRAWING
THE MANUFACTURERS DATA:

351-7533-022

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101439

NSN

5962-01-010-1439

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351-7533-022

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010101439

NSN

5962-01-010-1439

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
BODY WIDTH: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-7533-022A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 176.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TEST DATA DOCUMENT: 13499-351-7533 DRAWING
THE MANUFACTURERS DATA: