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5962-01-077-0393
20 Products
SD70312
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010770393
NSN
5962-01-077-0393
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, NONINVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT AND W/ENABLE
III END ITEM IDENTIFICATION: COMMUNICATION SYSTEM,TYPE AN/ARC-169
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CC5190-20
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770392
NSN
5962-01-077-0392
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND SCHOTTKY AND PROGRAMMED AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DH75682-20
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770392
NSN
5962-01-077-0392
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND SCHOTTKY AND PROGRAMMED AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HM9-7603-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770392
NSN
5962-01-077-0392
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND SCHOTTKY AND PROGRAMMED AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MMI5331-1F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770392
NSN
5962-01-077-0392
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND SCHOTTKY AND PROGRAMMED AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 019
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770392
NSN
5962-01-077-0392
ROM/PROM FAMILY 019
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770392
NSN
5962-01-077-0392
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND SCHOTTKY AND PROGRAMMED AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
S82S123W
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770392
NSN
5962-01-077-0392
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND SCHOTTKY AND PROGRAMMED AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54S288W-00
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770392
NSN
5962-01-077-0392
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND SCHOTTKY AND PROGRAMMED AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
72-00426-103
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010770393
NSN
5962-01-077-0393
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, NONINVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT AND W/ENABLE
III END ITEM IDENTIFICATION: COMMUNICATION SYSTEM,TYPE AN/ARC-169
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
72-00426-123
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010770393
NSN
5962-01-077-0393
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, NONINVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT AND W/ENABLE
III END ITEM IDENTIFICATION: COMMUNICATION SYSTEM,TYPE AN/ARC-169
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010770393
NSN
5962-01-077-0393
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, NONINVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT AND W/ENABLE
III END ITEM IDENTIFICATION: COMMUNICATION SYSTEM,TYPE AN/ARC-169
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DM54365W/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010770393
NSN
5962-01-077-0393
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, NONINVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT AND W/ENABLE
III END ITEM IDENTIFICATION: COMMUNICATION SYSTEM,TYPE AN/ARC-169
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DM7095W/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010770393
NSN
5962-01-077-0393
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, NONINVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT AND W/ENABLE
III END ITEM IDENTIFICATION: COMMUNICATION SYSTEM,TYPE AN/ARC-169
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010770393
NSN
5962-01-077-0393
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, NONINVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT AND W/ENABLE
III END ITEM IDENTIFICATION: COMMUNICATION SYSTEM,TYPE AN/ARC-169
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 325.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
17897
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770394
NSN
5962-01-077-0394
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
932821-6
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770394
NSN
5962-01-077-0394
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
B2051-6
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770394
NSN
5962-01-077-0394
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CC5190-6
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770394
NSN
5962-01-077-0394
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HM9-7603-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770394
NSN
5962-01-077-0394
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MMI5331-1F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010770394
NSN
5962-01-077-0394
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.248 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR AND W/STORAGE AND 3-STATE OUTPUT AND W/DECODED OUTPUT AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932623 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
