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5962-01-265-3610
20 Products
ROM/PROM FAMILY 026
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653610
NSN
5962-01-265-3610
ROM/PROM FAMILY 026
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653610
NSN
5962-01-265-3610
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4056
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 512 X 8 PROM
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
77-056107-06
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653600
NSN
5962-01-265-3600
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: PROGRAMMED AND BURN IN AND BIPOLAR AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: GOVERNMENT FURNISHED EQUIPMENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
77-056107-07
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653601
NSN
5962-01-265-3601
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: PROGRAMMED AND BURN IN AND BIPOLAR AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: GOVERNMENT FURNISHED EQUIPMENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
77-056138-05
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653602
NSN
5962-01-265-3602
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: PROGRAMMED AND BURN IN AND BIPOLAR AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: GOVERNMENT FURNISHED EQUIPMENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
77-056136-61
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653603
NSN
5962-01-265-3603
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
77-056136-52
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653604
NSN
5962-01-265-3604
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: ALTERED ITEM DRAWING
Related Searches:
77-056136-53
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653605
NSN
5962-01-265-3605
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 512 X 8 PROM
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
ROM/PROM FAMILY 016
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653605
NSN
5962-01-265-3605
ROM/PROM FAMILY 016
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653605
NSN
5962-01-265-3605
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 512 X 8 PROM
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
77-056136-67
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653606
NSN
5962-01-265-3606
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
77-056136-55
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653607
NSN
5962-01-265-3607
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 512 X 8 PROM
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
ROM/PROM FAMILY 016
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653607
NSN
5962-01-265-3607
ROM/PROM FAMILY 016
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653607
NSN
5962-01-265-3607
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 512 X 8 PROM
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
77-056136-56
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653608
NSN
5962-01-265-3608
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
77-056136-68
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653609
NSN
5962-01-265-3609
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: PROGRAMMED 512 X 8 PROM
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
ROM/PROM FAMILY 016
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653609
NSN
5962-01-265-3609
ROM/PROM FAMILY 016
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653609
NSN
5962-01-265-3609
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: PROGRAMMED 512 X 8 PROM
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
77-056136-69
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653610
NSN
5962-01-265-3610
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4056
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: PROGRAMMED 512 X 8 PROM
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
77-056136-70
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012653611
NSN
5962-01-265-3611
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
DESIGN CONTROL REFERENCE: 77-056136-70
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MANUFACTURERS CODE: 15280
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
THE MANUFACTURERS DATA:
Related Searches:
ROM/PROM FAMILY 016
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012653611
NSN
5962-01-265-3611
ROM/PROM FAMILY 016
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012653611
NSN
5962-01-265-3611
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
DESIGN CONTROL REFERENCE: 77-056136-70
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MANUFACTURERS CODE: 15280
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
THE MANUFACTURERS DATA:
Related Searches:
77-056136-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653612
NSN
5962-01-265-3612
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
FEATURES PROVIDED: BURN IN AND BIPOLAR AND PROGRAMMABLE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653612
NSN
5962-01-265-3612
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653612
NSN
5962-01-265-3612
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
FEATURES PROVIDED: BURN IN AND BIPOLAR AND PROGRAMMABLE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
77-062903-04
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012653613
NSN
5962-01-265-3613
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
