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5961-00-023-2386

20 Products

7734323P2

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961000232386

NSN

5961-00-023-2386

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7734323P2

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961000232386

NSN

5961-00-023-2386

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

2N3731

TRANSISTOR

NSN, MFG P/N

5961000228189

NSN

5961-00-022-8189

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2N3731

TRANSISTOR

NSN, MFG P/N

5961000228189

NSN

5961-00-022-8189

MFG

CONRAC SYSTEMS INC

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5331 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 320.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 320.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MAXIMUM BREAKDOW

2N3731A

TRANSISTOR

NSN, MFG P/N

5961000228189

NSN

5961-00-022-8189

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2N3731A

TRANSISTOR

NSN, MFG P/N

5961000228189

NSN

5961-00-022-8189

MFG

ADELCO ELEKTRONIK GMBH

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5331 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 320.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 320.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MAXIMUM BREAKDOW

ND228415

TRANSISTOR

NSN, MFG P/N

5961000228189

NSN

5961-00-022-8189

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ND228415

TRANSISTOR

NSN, MFG P/N

5961000228189

NSN

5961-00-022-8189

MFG

THALES TRAINING & SIMULATION LTD

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5331 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 320.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 320.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MAXIMUM BREAKDOW

RELEASE5331

TRANSISTOR

NSN, MFG P/N

5961000228189

NSN

5961-00-022-8189

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RELEASE5331

TRANSISTOR

NSN, MFG P/N

5961000228189

NSN

5961-00-022-8189

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5331 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 320.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 320.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MAXIMUM BREAKDOW

10525528

TRANSISTOR

NSN, MFG P/N

5961000229845

NSN

5961-00-022-9845

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10525528

TRANSISTOR

NSN, MFG P/N

5961000229845

NSN

5961-00-022-9845

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

2N1700

TRANSISTOR

NSN, MFG P/N

5961000229845

NSN

5961-00-022-9845

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2N1700

TRANSISTOR

NSN, MFG P/N

5961000229845

NSN

5961-00-022-9845

MFG

LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES

Description

CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC

1064782

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000230107

NSN

5961-00-023-0107

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1064782

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000230107

NSN

5961-00-023-0107

MFG

ITT CORPORATION

Description

DESIGN CONTROL REFERENCE: 1064782
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 28527
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

5339-090556

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000232381

NSN

5961-00-023-2381

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5339-090556

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000232381

NSN

5961-00-023-2381

MFG

AAI CORPORATION

Description

COAXIAL CONNECTOR SERIES DESIGNATION: BNC
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OPERATING FREQUENCY: 8.5 GIGAHERTZ MINIMUM AND 10.3 GIGAHERTZ MAXIMUM
OVERALL LENGTH: 2.090 INCHES NOMINAL
OVERALL WIDTH: 1.800 INCHES MAXIMUM

90DH106-2E

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000232381

NSN

5961-00-023-2381

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90DH106-2E

HOLDER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961000232381

NSN

5961-00-023-2381

MFG

MICROWAVE DEVELOPMENT LABORATORIES INC. DBA MDL

Description

COAXIAL CONNECTOR SERIES DESIGNATION: BNC
INPUT CONTACT TYPE: FEMALE
INPUT TERMINAL TYPE: COAXIAL CABLE
OPERATING FREQUENCY: 8.5 GIGAHERTZ MINIMUM AND 10.3 GIGAHERTZ MAXIMUM
OVERALL LENGTH: 2.090 INCHES NOMINAL
OVERALL WIDTH: 1.800 INCHES MAXIMUM

216M101-1

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961000232388

NSN

5961-00-023-2388

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216M101-1

SEMICONDUCTOR DEVIC

NSN, MFG P/N

5961000232388

NSN

5961-00-023-2388

MFG

JOINT OIL ANALYSIS PROGRAM DBA DEPARTMENT OF DEFENSE

2N264

TRANSISTOR

NSN, MFG P/N

5961000232701

NSN

5961-00-023-2701

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2N264

TRANSISTOR

NSN, MFG P/N

5961000232701

NSN

5961-00-023-2701

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE4050 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.150 INCHES NOMINAL
TERMINAL LENGTH: 1.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2N175

TRANSISTOR

NSN, MFG P/N

5961000232706

NSN

5961-00-023-2706

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2N175

TRANSISTOR

NSN, MFG P/N

5961000232706

NSN

5961-00-023-2706

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.495 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE1592 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.199 INCHES MAXIMUM
TERMINAL LENGTH: 0.202 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

TT835

TRANSISTOR

NSN, MFG P/N

5961000232706

NSN

5961-00-023-2706

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TT835

TRANSISTOR

NSN, MFG P/N

5961000232706

NSN

5961-00-023-2706

MFG

PILOT RADIO CORP

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.495 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE1592 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.199 INCHES MAXIMUM
TERMINAL LENGTH: 0.202 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

2088090-0001

TRANSISTOR

NSN, MFG P/N

5961000232710

NSN

5961-00-023-2710

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2088090-0001

TRANSISTOR

NSN, MFG P/N

5961000232710

NSN

5961-00-023-2710

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2N235C
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 80131
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
OVERALL WIDTH: 0.230 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

2N235C

TRANSISTOR

NSN, MFG P/N

5961000232710

NSN

5961-00-023-2710

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2N235C

TRANSISTOR

NSN, MFG P/N

5961000232710

NSN

5961-00-023-2710

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2N235C
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 80131
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
OVERALL WIDTH: 0.230 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

L2088090-1

TRANSISTOR

NSN, MFG P/N

5961000232710

NSN

5961-00-023-2710

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L2088090-1

TRANSISTOR

NSN, MFG P/N

5961000232710

NSN

5961-00-023-2710

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 2N235C
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 80131
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
OVERALL WIDTH: 0.230 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.020 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

1N2326

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000232711

NSN

5961-00-023-2711

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1N2326

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000232711

NSN

5961-00-023-2711

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE2622 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.380 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

225871

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000232711

NSN

5961-00-023-2711

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225871

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961000232711

NSN

5961-00-023-2711

MFG

RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE2622 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.380 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

1850-0117

TRANSISTOR

NSN, MFG P/N

5961000232718

NSN

5961-00-023-2718

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1850-0117

TRANSISTOR

NSN, MFG P/N

5961000232718

NSN

5961-00-023-2718

MFG

AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.288 INCHES NOMINAL
OVERALL LENGTH: 0.789 INCHES MAXIMUM
OVERALL WIDTH: 0.429 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 28.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE3324 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 65.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMU