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5961-01-394-3392
20 Products
P6KE47CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943392
NSN
5961-01-394-3392
MFG
FAE INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
79-00131-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943392
NSN
5961-01-394-3392
79-00131-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943392
NSN
5961-01-394-3392
MFG
CXR LARUS CORPORATION DIV CXR TELCOM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5343A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943400
NSN
5961-01-394-3400
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 630.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
GS810GU7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943400
NSN
5961-01-394-3400
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 630.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
922-6518-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943407
NSN
5961-01-394-3407
922-6518-040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943407
NSN
5961-01-394-3407
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 95105-922-6518 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MA4P508
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943407
NSN
5961-01-394-3407
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 95105-922-6518 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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UM7104E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943407
NSN
5961-01-394-3407
MFG
MICRO USPD INC
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.975 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 95105-922-6518 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
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A3110613-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943661
NSN
5961-01-394-3661
A3110613-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943661
NSN
5961-01-394-3661
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 5895-01-288-6340
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3110613-001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.107 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 80063-A3110613 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
U280613
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943661
NSN
5961-01-394-3661
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: 5895-01-288-6340
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS GOLD
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: A3110613-001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.107 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 RIBBON
TEST DATA DOCUMENT: 80063-A3110613 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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351-0512-020
TRANSISTOR
NSN, MFG P/N
5961013943722
NSN
5961-01-394-3722
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
TRANSISTOR
Related Searches:
SHQ667
TRANSISTOR
NSN, MFG P/N
5961013943722
NSN
5961-01-394-3722
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
89026-2N7227TX
TRANSISTOR
NSN, MFG P/N
5961013944660
NSN
5961-01-394-4660
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7227
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TP-254AA
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/592
NONDEFINITIVE SPEC/STD DATA: FY SELECTION
OVERALL LENGTH: 1.235 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/592 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
JANTX2N7227
TRANSISTOR
NSN, MFG P/N
5961013944660
NSN
5961-01-394-4660
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7227
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TP-254AA
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/592
NONDEFINITIVE SPEC/STD DATA: FY SELECTION
OVERALL LENGTH: 1.235 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/592 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
848266-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013944730
NSN
5961-01-394-4730
848266-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013944730
NSN
5961-01-394-4730
MFG
SOLID STATE DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS OR PLASTIC OR METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.160 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 49956-848266 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
048530
TRANSISTOR
NSN, MFG P/N
5961013944857
NSN
5961-01-394-4857
MFG
PHOENIX AEROSPACE INC
Description
III END ITEM IDENTIFICATION: AB206 HELICOPTER
Related Searches:
352-0227-010
TRANSISTOR
NSN, MFG P/N
5961013944875
NSN
5961-01-394-4875
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
NE85635
TRANSISTOR
NSN, MFG P/N
5961013944875
NSN
5961-01-394-4875
MFG
CALIFORNIA EASTERN LABS
Description
TRANSISTOR
Related Searches:
352-1109-012
TRANSISTOR
NSN, MFG P/N
5961013944876
NSN
5961-01-394-4876
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
352-1231-012
TRANSISTOR
NSN, MFG P/N
5961013944877
NSN
5961-01-394-4877
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
352-1600-032
TRANSISTOR
NSN, MFG P/N
5961013944878
NSN
5961-01-394-4878
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
