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5961-01-349-3246
20 Products
94-0116
TRANSISTOR
NSN, MFG P/N
5961013493246
NSN
5961-01-349-3246
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 178.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
200299
TRANSISTOR
NSN, MFG P/N
5961013491508
NSN
5961-01-349-1508
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEADS BENT TO TO-18 PACKAGE SPACING; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
2N3906-18
TRANSISTOR
NSN, MFG P/N
5961013491508
NSN
5961-01-349-1508
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEADS BENT TO TO-18 PACKAGE SPACING; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
2N3906.18
TRANSISTOR
NSN, MFG P/N
5961013491508
NSN
5961-01-349-1508
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES NOMINAL
OVERALL LENGTH: 0.185 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: LEADS BENT TO TO-18 PACKAGE SPACING; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
741C5040-40-120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013491998
NSN
5961-01-349-1998
741C5040-40-120
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013491998
NSN
5961-01-349-1998
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 741C5040-40-120
III END ITEM IDENTIFICATION: F-14 ACFT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, DC
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4192461
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013492908
NSN
5961-01-349-2908
MFG
BAE SYSTEMS LAND & ARMAMENTS L.P. DBA US COMBAT SYSTEMS-GROUND SYSTEMS DIV DIV GROUND SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
10047-9223-01
TRANSISTOR
NSN, MFG P/N
5961013493243
NSN
5961-01-349-3243
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
III END ITEM IDENTIFICATION: PACER SPECIAL
Related Searches:
10047-9393-01
TRANSISTOR
NSN, MFG P/N
5961013493244
NSN
5961-01-349-3244
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
III END ITEM IDENTIFICATION: PACER SPECIAL
Related Searches:
1855-0473
TRANSISTOR
NSN, MFG P/N
5961013493246
NSN
5961-01-349-3246
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 178.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
1855-0849
TRANSISTOR
NSN, MFG P/N
5961013493246
NSN
5961-01-349-3246
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 178.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MINIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
1901-1244
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013493247
NSN
5961-01-349-3247
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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1AB096500001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013493247
NSN
5961-01-349-3247
1AB096500001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013493247
NSN
5961-01-349-3247
MFG
ALCATEL - LUCENT FRANCE
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
MUR140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013493247
NSN
5961-01-349-3247
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
13-94865-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013493641
NSN
5961-01-349-3641
13-94865-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013493641
NSN
5961-01-349-3641
MFG
ELSTON ELECTRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1N4948GP
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013493641
NSN
5961-01-349-3641
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
5082-2750
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013493642
NSN
5961-01-349-3642
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
OVERALL DIAMETER: 0.055 INCHES MAXIMUM
OVERALL LENGTH: 0.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS NOMINAL PEAK GATE POWER DISSIPATION
SPECIAL FEATURES: VOLTAGE SENSITIVITY 5MV
TERMINAL TYPE AND QUANTITY: 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
S1662
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013494165
NSN
5961-01-349-4165
S1662
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013494165
NSN
5961-01-349-4165
MFG
EDAL INDUSTRIES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963), FORRESTAL CLASS CV, KIDD CLASS DDG, WASP CLASS DDG, VIRGINIA CLASS CGN (41), SUPPLY CLASS AOE, TARAWA CLASS LHA, EMORY S. LAND CLASS AS, OLIVER PERRY CLASS FFG.
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
1855-0687
TRANSISTOR
NSN, MFG P/N
5961013494297
NSN
5961-01-349-4297
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
SPF938
TRANSISTOR
NSN, MFG P/N
5961013494297
NSN
5961-01-349-4297
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
1906-0301
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013494299
NSN
5961-01-349-4299
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.140 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.560 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
