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5961-01-412-9224
20 Products
JANTX2N7336
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014129224
NSN
5961-01-412-9224
JANTX2N7336
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014129224
NSN
5961-01-412-9224
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 2
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7336
III END ITEM IDENTIFICATION: 5963-01-262-3005
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/598
OVERALL HEIGHT: 0.105 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.690 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/598 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
94-0627
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014129224
NSN
5961-01-412-9224
94-0627
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014129224
NSN
5961-01-412-9224
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 2
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7336
III END ITEM IDENTIFICATION: 5963-01-262-3005
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/598
OVERALL HEIGHT: 0.105 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.690 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/598 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
G200880-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014129224
NSN
5961-01-412-9224
G200880-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014129224
NSN
5961-01-412-9224
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE N-CHANNEL INSULATED GATE TYPE P-CHANNEL INSULATED GATE TYPE
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 2
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7336
III END ITEM IDENTIFICATION: 5963-01-262-3005
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/598
OVERALL HEIGHT: 0.105 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
OVERALL LENGTH: 0.690 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/598 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR
Related Searches:
25-0570-1200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014129355
NSN
5961-01-412-9355
25-0570-1200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014129355
NSN
5961-01-412-9355
MFG
PHASETRONICS INC DBA MOTORTRONICS
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
JAN1N4113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014129925
NSN
5961-01-412-9925
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4113-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL LENGTH: 2.120 INCHES MINIMUM AND 3.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 91349-M19500/435 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.0 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
PL386D3018-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014129925
NSN
5961-01-412-9925
PL386D3018-6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014129925
NSN
5961-01-412-9925
MFG
EMS DEVELOPMENT CORPORATION
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4113-1
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL LENGTH: 2.120 INCHES MINIMUM AND 3.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 91349-M19500/435 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.0 NOMINAL NOMINAL REGULATOR VOLTAGE
Related Searches:
QMNS-00215
TRANSISTOR
NSN, MFG P/N
5961014129971
NSN
5961-01-412-9971
MFG
GIGA-TRONICS INCORPORATED
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.710 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
SD215DE
TRANSISTOR
NSN, MFG P/N
5961014129971
NSN
5961-01-412-9971
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.710 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
1656817-6
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014129990
NSN
5961-01-412-9990
1656817-6
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014129990
NSN
5961-01-412-9990
MFG
RAYTHEON COMPANY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
655-545-6
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014129990
NSN
5961-01-412-9990
655-545-6
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014129990
NSN
5961-01-412-9990
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SA6322
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014129990
NSN
5961-01-412-9990
SA6322
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014129990
NSN
5961-01-412-9990
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SEN-B-472-6
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014129990
NSN
5961-01-412-9990
SEN-B-472-6
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014129990
NSN
5961-01-412-9990
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SD2100
TRANSISTOR
NSN, MFG P/N
5961014130026
NSN
5961-01-413-0026
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: 6625013241523 E/I FSCM 80058 AN/USM-632(V)3
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.710 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: N-CHANNEL DEPLEATION-MODE LATERAL DMOS FET
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
DK78103040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014130402
NSN
5961-01-413-0402
DK78103040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014130402
NSN
5961-01-413-0402
MFG
STANDARD COMMUNICATIONS CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
J30-0008-000
TRANSISTOR
NSN, MFG P/N
5961014130407
NSN
5961-01-413-0407
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
TRANSISTOR
Related Searches:
34001038
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014131084
NSN
5961-01-413-1084
MFG
FLIR SYSTEMS INC. DIV CORPORATE
Description
INCLOSURE MATERIAL: CERAMIC
POWER RATING PER CHARACTERISTIC: 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SPECIAL FEATURES: PEAK PULSE POWER DISSIPATION AT 25 DEG C., 15,000 W AT 1 MS; MAX CLAMPING V AT 1 PP, 45 V; OPERATING AND STORAGE TEMP -65 TO 150 DEG. C
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 32.0 NOMINAL WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
1-834-484-026
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014131339
NSN
5961-01-413-1339
1-834-484-026
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014131339
NSN
5961-01-413-1339
MFG
CONMACO INC
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1-834-484-026
MANUFACTURERS CODE: 62303
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
50207818
TRANSISTOR
NSN, MFG P/N
5961014132008
NSN
5961-01-413-2008
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 50207818
MANUFACTURERS CODE: 25230
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
50207828
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014132009
NSN
5961-01-413-2009
MFG
MAGNETEK INC INDUSTRIAL CONTROLS GROUP DIV DBA MAGNETEK
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 50207828
MANUFACTURERS CODE: 25230
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
89470435
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133608
NSN
5961-01-413-3608
89470435
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014133608
NSN
5961-01-413-3608
MFG
THALES AIR DEFENCE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
