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5961-01-325-2858
20 Products
JX1N3595
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013252858
NSN
5961-01-325-2858
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 150.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: GLASS OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
5R4810-027-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013253318
NSN
5961-01-325-3318
5R4810-027-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013253318
NSN
5961-01-325-3318
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 180.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JX1N485B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013253318
NSN
5961-01-325-3318
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 180.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
1002111-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013253319
NSN
5961-01-325-3319
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3246144-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013253319
NSN
5961-01-325-3319
3246144-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013253319
NSN
5961-01-325-3319
MFG
RAYTHEON COMPANY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ZC2800
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013253319
NSN
5961-01-325-3319
MFG
ZETEX PLC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1296H61PC84
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013253558
NSN
5961-01-325-3558
1296H61PC84
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013253558
NSN
5961-01-325-3558
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 8466A03H14
MANUFACTURERS CODE: 04804
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
CR180-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013254040
NSN
5961-01-325-4040
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 1.80 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 750B VISUAL,MIL-STD-750 PROCESSING
TERMINAL CIRCLE DIAMETER: 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
SA11CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013254041
NSN
5961-01-325-4041
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM ON-STATE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.120 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM ON-STATE POWER DISSIPATION
SPECIAL FEATURES: BIPOLAR APPLICATIONS
TERMINAL CIRCLE DIAMETER: 0.030 INCHES MINIMUM AND 0.034 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
5082-2271
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013254042
NSN
5961-01-325-4042
5082-2271
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013254042
NSN
5961-01-325-4042
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: RADAR SET,AN/FPS-509(V),MARCONI RADAR SYSTEMS LTD
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.320 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
1002116-1
TRANSISTOR
NSN, MFG P/N
5961013254450
NSN
5961-01-325-4450
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
3245856-0001
TRANSISTOR
NSN, MFG P/N
5961013254450
NSN
5961-01-325-4450
MFG
RAYTHEON COMPANY
Description
TRANSISTOR
Related Searches:
DM1217
TRANSISTOR
NSN, MFG P/N
5961013254450
NSN
5961-01-325-4450
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
TRANSISTOR
Related Searches:
353-0468-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013254452
NSN
5961-01-325-4452
353-0468-021
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013254452
NSN
5961-01-325-4452
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CAPACITANCE RATING IN PICOFARADS: 0.9 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 250.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.060 INCHES MINIMUM AND 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA4P613
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013254452
NSN
5961-01-325-4452
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.9 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 250.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.060 INCHES MINIMUM AND 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
566537-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013254552
NSN
5961-01-325-4552
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
IRFK4H150
TRANSISTOR
NSN, MFG P/N
5961013254711
NSN
5961-01-325-4711
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 3.620 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 4.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
TIC225M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013254713
NSN
5961-01-325-4713
TIC225M
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013254713
NSN
5961-01-325-4713
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 80.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
OVERALL HEIGHT: 0.165 INCHES NOMINAL
OVERALL LENGTH: 1.145 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 2.2 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
5816728
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013255435
NSN
5961-01-325-5435
5816728
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013255435
NSN
5961-01-325-5435
MFG
NAVAL SEA SYSTEMS COMMAND
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 5816728
III END ITEM IDENTIFICATION: FLEET EXERCISE SYSTEM,TORPEDO MK50
MANUFACTURERS CODE: 53711
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.573 INCHES MAXIMUM
SPECIAL FEATURES: DUAL,SCHOTTKY RECTIFIER
THE MANUFACTURERS DATA:
Related Searches:
5624514
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013255537
NSN
5961-01-325-5537
5624514
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013255537
NSN
5961-01-325-5537
MFG
NAVAL SEA SYSTEMS COMMAND
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REVERSE VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: 5624514
III END ITEM IDENTIFICATION: MK93 MOD0 FLEET EXERCISE SYSTEM,TORPEDO MK50
MANUFACTURERS CODE: 53711
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.735 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
OVERALL WIDTH: 0.735 INCHES MINIMUM AND 0.760 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TERMINAL LUG
THE MANUFACTURERS DATA:
