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5961-01-306-1912
20 Products
Y-1133-6-2
TRANSISTOR
NSN, MFG P/N
5961013061912
NSN
5961-01-306-1912
MFG
BREEZE-EASTERN CORPORATION
Description
TRANSISTOR
Related Searches:
P17-600-070B3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013059318
NSN
5961-01-305-9318
P17-600-070B3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013059318
NSN
5961-01-305-9318
MFG
BOEING COMPANY THE DIV DEFENSE SPACE & SECURITY
Description
CURRENT RATING PER CHARACTERISTIC: 85.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
59392-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013059353
NSN
5961-01-305-9353
59392-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013059353
NSN
5961-01-305-9353
MFG
TELEDYNE BROWN ENGINEERING INC.
Description
MAJOR COMPONENTS: DIODE 8; HEATSINK,RECTIFIER 1
Related Searches:
13032540
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013059750
NSN
5961-01-305-9750
13032540
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013059750
NSN
5961-01-305-9750
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
C5001044-1
TRANSISTOR
NSN, MFG P/N
5961013060787
NSN
5961-01-306-0787
MFG
DEPARTMENT OF THE ARMY HQ U S ARMY ELECTRONICS RESEARCH AND DEVELOPMENT COMMAND
Description
TRANSISTOR
Related Searches:
A114N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013060788
NSN
5961-01-306-0788
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
70HR50A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013060789
NSN
5961-01-306-0789
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: REVERSE POLARITY AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.664 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
P17-500R-070B3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013060789
NSN
5961-01-306-0789
P17-500R-070B3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013060789
NSN
5961-01-306-0789
MFG
LA MARCHE MFG. CO. DBA LA MARCHE
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: REVERSE POLARITY AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.664 INCHES MINIMUM AND 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REVERSE VOLTAGE, PEAK
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IRF630
TRANSISTOR
NSN, MFG P/N
5961013061913
NSN
5961-01-306-1913
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 9.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.600 INCHES MAXIMUM
OVERALL WIDTH: 0.415 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 74.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.530 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
2996
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013061914
NSN
5961-01-306-1914
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4004GP
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013061915
NSN
5961-01-306-1915
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
50241001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013061915
NSN
5961-01-306-1915
MFG
MAGNETIC PERIPHERALS INC OKLAHOMA CITY OPNS SUB OF CONTROL DATA CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5626GP
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013061917
NSN
5961-01-306-1917
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28372-472M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062451
NSN
5961-01-306-2451
28372-472M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062451
NSN
5961-01-306-2451
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.85 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.25 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX79C16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062451
NSN
5961-01-306-2451
MFG
VISHAY
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 1.85 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.25 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
28372-309Z
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062452
NSN
5961-01-306-2452
28372-309Z
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062452
NSN
5961-01-306-2452
MFG
AEROFLEX WICHITA INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE AND ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX79C15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062452
NSN
5961-01-306-2452
MFG
VISHAY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE AND ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
210047
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062453
NSN
5961-01-306-2453
MFG
WAVETEK RF PRODUCTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
211289
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062453
NSN
5961-01-306-2453
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28371-371S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062453
NSN
5961-01-306-2453
28371-371S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013062453
NSN
5961-01-306-2453
MFG
AEROFLEX WICHITA INC.
Description
SEMICONDUCTOR DEVICE,DIODE
