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5961-00-252-1309

20 Products

Y5017

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

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Y5017

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

MFG

THALES UK LIMITED

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 004087
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.016 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC

5L.5532.102.36

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

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5L.5532.102.36

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

MFG

EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 004087
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.016 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC

600062-06

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

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600062-06

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

MFG

EDO

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 004087
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.016 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC

619174-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

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619174-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 004087
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.016 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC

888871

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

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888871

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

MFG

L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 004087
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.016 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC

B162003-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

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B162003-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

MFG

BUTLER NATIONAL CORP

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 004087
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.016 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC

P58-005773-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

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P58-005773-003

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

MFG

PULTZ JOHN M CO INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 004087
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.016 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC

VA70-0036-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

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VA70-0036-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521309

NSN

5961-00-252-1309

MFG

BAE SYSTEMS OPERATIONS LTD

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 19156
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 004087
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.016 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -70.0 MAXIMUM BREAKDOWN VOLTAGE, DC

5082-3029

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

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5082-3029

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); IWO JIMA CLASS LPH; FORRESTAL CLASS CV; SUPPLY CLASS AOE; WASP CLASS LHD; NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG; WHIDBEY ISLAND CLASS LSD; EMORY S. LAND CLASS AS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

5082-8697

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

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5082-8697

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

MFG

HEWLETT PACKARD CO

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); IWO JIMA CLASS LPH; FORRESTAL CLASS CV; SUPPLY CLASS AOE; WASP CLASS LHD; NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG; WHIDBEY ISLAND CLASS LSD; EMORY S. LAND CLASS AS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

511769-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

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511769-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

MFG

ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); IWO JIMA CLASS LPH; FORRESTAL CLASS CV; SUPPLY CLASS AOE; WASP CLASS LHD; NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG; WHIDBEY ISLAND CLASS LSD; EMORY S. LAND CLASS AS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

MA-47556

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

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MA-47556

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); IWO JIMA CLASS LPH; FORRESTAL CLASS CV; SUPPLY CLASS AOE; WASP CLASS LHD; NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG; WHIDBEY ISLAND CLASS LSD; EMORY S. LAND CLASS AS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

PS0810

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

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PS0810

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521310

NSN

5961-00-252-1310

MFG

PARAMETRIC INDUSTRIES INC

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: VIRGINIA CLASS CGN (41); IWO JIMA CLASS LPH; FORRESTAL CLASS CV; SUPPLY CLASS AOE; WASP CLASS LHD; NIMITZ CLASS CVN; OLIVER PERRY CLASS FFG; WHIDBEY ISLAND CLASS LSD; EMORY S. LAND CLASS AS
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.076 INCHES NOMINAL
OVERALL LENGTH: 0.170 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE

007-0137-01

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

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007-0137-01

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND -5.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE

204027

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

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204027

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

MFG

CIPHER DATA PRODUCTS INC OEM MARKETING DIV

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND -5.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE

2N6028

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

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2N6028

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND -5.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE

327946

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

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327946

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

MFG

TELEMECHANICS INC

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND -5.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE

SMD663284

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

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SMD663284

TRANSISTOR

NSN, MFG P/N

5961002521322

NSN

5961-00-252-1322

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM FORWARD VOLTAGE, AVERAGE AND -5.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE

1N5243B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521323

NSN

5961-00-252-1323

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1N5243B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521323

NSN

5961-00-252-1323

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

353-3713-230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521323

NSN

5961-00-252-1323

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353-3713-230

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002521323

NSN

5961-00-252-1323

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

CURRENT RATING PER CHARACTERISTIC: 9.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 MAXIMUM NOMINAL REGULATOR VOLTAGE