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5961-00-899-0203
20 Products
1N827A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008990203
NSN
5961-00-899-0203
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
7901287-001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008990508
NSN
5961-00-899-0508
MFG
DELCO ELECTRONICS CORP DELCO SYSTEMS OPNS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.125 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
7901287-001REVB
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008990508
NSN
5961-00-899-0508
7901287-001REVB
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008990508
NSN
5961-00-899-0508
MFG
GENERAL MOTORS CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.125 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
GE4JA11AC1AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008990743
NSN
5961-00-899-0743
GE4JA11AC1AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008990743
NSN
5961-00-899-0743
MFG
GENERAL ELECTRIC CO LAMP DIVISION OF CONSUMER PRODUCTS GROUP
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 170.0 DEG CELSIUS
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 WIRE LEAD
Related Searches:
GE4JA411AC1AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008990743
NSN
5961-00-899-0743
GE4JA411AC1AD1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961008990743
NSN
5961-00-899-0743
MFG
GENERAL ELECTRIC CO
Description
MATERIAL: SILICON
MOUNTING METHOD: BRACKET
OPERATING TEMP RANGE: -65.0 TO 170.0 DEG CELSIUS
OVERALL HEIGHT: 2.500 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES NOMINAL
OVERALL WIDTH: 1.562 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 WIRE LEAD
Related Searches:
1N2832B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008991151
NSN
5961-00-899-1151
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N2832B TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
048619-0001
TRANSISTOR
NSN, MFG P/N
5961008992247
NSN
5961-00-899-2247
MFG
THALES ATM INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
2N1560
TRANSISTOR
NSN, MFG P/N
5961008992247
NSN
5961-00-899-2247
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
RELEASE2984
TRANSISTOR
NSN, MFG P/N
5961008992247
NSN
5961-00-899-2247
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
1N253
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008992253
NSN
5961-00-899-2253
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94756
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 479-0408-001
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 95.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
479-0408-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008992253
NSN
5961-00-899-2253
479-0408-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008992253
NSN
5961-00-899-2253
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94756
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 479-0408-001
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.375 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.445 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 95.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
10525841
TRANSISTOR
NSN, MFG P/N
5961008993134
NSN
5961-00-899-3134
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1850-0073
TRANSISTOR
NSN, MFG P/N
5961008993134
NSN
5961-00-899-3134
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
2N1204
TRANSISTOR
NSN, MFG P/N
5961008993134
NSN
5961-00-899-3134
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1N1220B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008993476
NSN
5961-00-899-3476
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3420 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2N649
TRANSISTOR
NSN, MFG P/N
5961008995040
NSN
5961-00-899-5040
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-1
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 80.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.081 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
8050001650
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008995566
NSN
5961-00-899-5566
8050001650
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008995566
NSN
5961-00-899-5566
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
DESIGN CONTROL REFERENCE: 8050001650
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 57057
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N2833B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008995568
NSN
5961-00-899-5568
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.370 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
8050001653
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008995568
NSN
5961-00-899-5568
8050001653
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961008995568
NSN
5961-00-899-5568
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.370 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 62.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
4913286-00
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961008995574
NSN
5961-00-899-5574
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
