My Quote Request
No products added yet
5961-00-578-7329
20 Products
HP5082-6825
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005787329
NSN
5961-00-578-7329
HP5082-6825
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005787329
NSN
5961-00-578-7329
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
DESIGN CONTROL REFERENCE: 42-004051-01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 30890
OVERALL DIAMETER: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL HEIGHT: 0.030 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
THE MANUFACTURERS DATA:
Related Searches:
2N158
TRANSISTOR
NSN, MFG P/N
5961005785775
NSN
5961-00-578-5775
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.580 INCHES MAXIMUM
OVERALL LENGTH: 0.828 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
27113
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005785803
NSN
5961-00-578-5803
MFG
TELEPHONICS CORP/PRD INSTRUMENTS
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN78
III END ITEM IDENTIFICATION: TYPE NO. FR-111/MPQ
INPUT TERMINAL IDENTIFICATION: UG-419/U
INPUT TERMINAL TYPE: WAVEGUIDE FLANGE
OPERATING FREQUENCY: 16000.0 MEGAHERTZ MAXIMUM
OUTPUT TERMINAL TYPE: TERMINAL LUG
SPECIAL FEATURES: 1.211 IN. BY 1.312 IN. BY 1.812 IN.
Related Searches:
SMA286713
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005785803
NSN
5961-00-578-5803
SMA286713
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961005785803
NSN
5961-00-578-5803
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
ACCOMMODATED EQUIPMENT IDENTIFYING NUMBER: IN78
III END ITEM IDENTIFICATION: TYPE NO. FR-111/MPQ
INPUT TERMINAL IDENTIFICATION: UG-419/U
INPUT TERMINAL TYPE: WAVEGUIDE FLANGE
OPERATING FREQUENCY: 16000.0 MEGAHERTZ MAXIMUM
OUTPUT TERMINAL TYPE: TERMINAL LUG
SPECIAL FEATURES: 1.211 IN. BY 1.312 IN. BY 1.812 IN.
Related Searches:
42-004051-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005787329
NSN
5961-00-578-7329
42-004051-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005787329
NSN
5961-00-578-7329
MFG
INTERLINK COMMUNICATIONS INC
Description
DESIGN CONTROL REFERENCE: 42-004051-01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 30890
OVERALL DIAMETER: 0.051 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
OVERALL HEIGHT: 0.030 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE
THE MANUFACTURERS DATA:
Related Searches:
2138135G001
TRANSISTOR
NSN, MFG P/N
5961005787405
NSN
5961-00-578-7405
MFG
ITT CORPORATION
Description
DESIGN CONTROL REFERENCE: 2138135G001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 28527
THE MANUFACTURERS DATA:
Related Searches:
2N2102
TRANSISTOR
NSN, MFG P/N
5961005787871
NSN
5961-00-578-7871
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MINIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER AND 65.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
FBNL148
TRANSISTOR
NSN, MFG P/N
5961005787871
NSN
5961-00-578-7871
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MINIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER AND 65.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
652C4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005788010
NSN
5961-00-578-8010
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
A474-788
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005788010
NSN
5961-00-578-8010
MFG
AVIONICS SPECIALTIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.9 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N209
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005788560
NSN
5961-00-578-8560
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
DESIGN CONTROL REFERENCE: 1N209
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 57057
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
8185629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005788560
NSN
5961-00-578-8560
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 1N209
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 57057
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
IN209
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005788560
NSN
5961-00-578-8560
MFG
N A P SMD TECHNOLOGY INC
Description
DESIGN CONTROL REFERENCE: 1N209
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 57057
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1902-0004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005788585
NSN
5961-00-578-8585
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1323 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N1323
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005788585
NSN
5961-00-578-8585
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1323 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
ZA60
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005788585
NSN
5961-00-578-8585
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N1323 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
601C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005788590
NSN
5961-00-578-8590
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.220 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.145 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1N3337RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005789774
NSN
5961-00-578-9774
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 640.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3337RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 78.8 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
1N333RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005789774
NSN
5961-00-578-9774
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 640.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3337RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 78.8 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
JAN1N3337RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005789774
NSN
5961-00-578-9774
JAN1N3337RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005789774
NSN
5961-00-578-9774
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 640.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3337RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 78.8 MAXIMUM BREAKDOWN VOLTAGE, DC
