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5961-00-056-0893
20 Products
JAN2N1874AA
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000560893
NSN
5961-00-056-0893
JAN2N1874AA
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000560893
NSN
5961-00-056-0893
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1874A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-198
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM GATE VOLTAGE, DC AND 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JAN2N1874A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000560893
NSN
5961-00-056-0893
JAN2N1874A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000560893
NSN
5961-00-056-0893
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N1874A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-198
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL CIRCLE DIAMETER: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM GATE VOLTAGE, DC AND 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
K663150064
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562187
NSN
5961-00-056-2187
K663150064
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562187
NSN
5961-00-056-2187
MFG
F E L CORP
Description
DESIGN CONTROL REFERENCE: K663150064
MAJOR COMPONENTS: DIODES 4
MANUFACTURERS CODE: 16786
SPECIAL FEATURES: 8 STUD TYPE TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
K663150070
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562188
NSN
5961-00-056-2188
K663150070
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562188
NSN
5961-00-056-2188
MFG
F E L CORP
Description
MAJOR COMPONENTS: DIODE 8; TERMINAL BOARD 1
OVERALL HEIGHT: 0.781 INCHES NOMINAL
OVERALL LENGTH: 4.718 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
Related Searches:
K663160077
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562190
NSN
5961-00-056-2190
K663160077
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562190
NSN
5961-00-056-2190
MFG
F E L CORP
Description
MAJOR COMPONENTS: DIODE4; MTG BOARD 1
Related Searches:
K663160155
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562191
NSN
5961-00-056-2191
K663160155
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562191
NSN
5961-00-056-2191
MFG
F E L CORP
Description
MAJOR COMPONENTS: DIODE 4; TERMINAL BOARD 1
Related Searches:
K663160072
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562192
NSN
5961-00-056-2192
K663160072
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562192
NSN
5961-00-056-2192
MFG
F E L CORP
Description
MAJOR COMPONENTS: DIODE 4; TERMINAL BOARD 1
Related Searches:
K663170084
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000562193
NSN
5961-00-056-2193
K663170084
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000562193
NSN
5961-00-056-2193
MFG
F E L CORP
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-3
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.725 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SUBJECT DIODE IS MOUNTED ON A BOARD; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
K663280036
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562195
NSN
5961-00-056-2195
K663280036
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961000562195
NSN
5961-00-056-2195
MFG
F E L CORP
Description
MAJOR COMPONENTS: DIODE 2; MTG BOARD 1
Related Searches:
202-883
TRANSISTOR
NSN, MFG P/N
5961000562701
NSN
5961-00-056-2701
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
TRANSISTOR
Related Searches:
2302615
TRANSISTOR
NSN, MFG P/N
5961000562701
NSN
5961-00-056-2701
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
TRANSISTOR
Related Searches:
34667
TRANSISTOR
NSN, MFG P/N
5961000563725
NSN
5961-00-056-3725
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
7210027-003
TRANSISTOR
NSN, MFG P/N
5961000563725
NSN
5961-00-056-3725
MFG
COHU INC. DBA COHU ELECTRONICS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
GA2046
TRANSISTOR
NSN, MFG P/N
5961000563725
NSN
5961-00-056-3725
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL HEIGHT: 0.260 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
755-402107
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000563738
NSN
5961-00-056-3738
755-402107
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000563738
NSN
5961-00-056-3738
MFG
VIASYS RESPIRATORY CARE INC. DBA BIOSYS HEALTHCARE
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
760-20033-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000563983
NSN
5961-00-056-3983
760-20033-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000563983
NSN
5961-00-056-3983
MFG
EDO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
HC7005B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000563983
NSN
5961-00-056-3983
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
SC7005B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000563983
NSN
5961-00-056-3983
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
0109-0036
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000564634
NSN
5961-00-056-4634
0109-0036
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000564634
NSN
5961-00-056-4634
MFG
ENGINEERED ELECTRIC COMPANY DBA DRS FERMONT
Description
MATERIAL: SILICON
Related Searches:
13211E4869
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000564634
NSN
5961-00-056-4634
13211E4869
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000564634
NSN
5961-00-056-4634
MFG
CECOM LR CENTER
Description
MATERIAL: SILICON
