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5961-00-215-3268
20 Products
CR0200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002153268
NSN
5961-00-215-3268
MFG
SCIENTIFIC RADIO SYSTEMS INC
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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MS8100
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002153268
NSN
5961-00-215-3268
MFG
SOLITRON DEVICES INC.
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.078 INCHES NOMINAL
OVERALL LENGTH: 0.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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UZ5117
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961002155973
NSN
5961-00-215-5973
MFG
MICRO USPD INC
Description
DESIGN CONTROL REFERENCE: UZ5117
MANUFACTURERS CODE: 12969
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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2N5039
TRANSISTOR
NSN, MFG P/N
5961002155999
NSN
5961-00-215-5999
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5765 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMIT
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2N5039A
TRANSISTOR
NSN, MFG P/N
5961002155999
NSN
5961-00-215-5999
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5765 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMIT
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921339
TRANSISTOR
NSN, MFG P/N
5961002155999
NSN
5961-00-215-5999
MFG
THALES UK LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5765 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMIT
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99053698
TRANSISTOR
NSN, MFG P/N
5961002155999
NSN
5961-00-215-5999
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5765 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMIT
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40-666-003-00
TRANSISTOR
NSN, MFG P/N
5961002156150
NSN
5961-00-215-6150
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
SEMICONDUCTOR MATERIAL: SILICON
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40-666-3224
DIODE,SPECIAL
NSN, MFG P/N
5961002156161
NSN
5961-00-215-6161
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
DIODE,SPECIAL
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40-666-3291
DIODE,SPECIAL
NSN, MFG P/N
5961002156174
NSN
5961-00-215-6174
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
DIODE,SPECIAL
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STD2551-41
DIODE ARRAY
NSN, MFG P/N
5961002156359
NSN
5961-00-215-6359
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
DIODE ARRAY
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40-656-1003-08
DIODE,SPECIAL
NSN, MFG P/N
5961002156492
NSN
5961-00-215-6492
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
DIODE,SPECIAL
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STD2551-02
DIODE,SPECIAL
NSN, MFG P/N
5961002156597
NSN
5961-00-215-6597
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
DIODE,SPECIAL
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STD2551-026
DIODE,SPECIAL
NSN, MFG P/N
5961002156598
NSN
5961-00-215-6598
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
DIODE,SPECIAL
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STD2551-027
DIODE,SPECIAL
NSN, MFG P/N
5961002156599
NSN
5961-00-215-6599
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
DIODE,SPECIAL
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STD2551-028
DIODE,SPECIAL
NSN, MFG P/N
5961002156600
NSN
5961-00-215-6600
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
DIODE,SPECIAL
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DIODE,SPECIAL
NSN, MFG P/N
5961002156601
NSN
5961-00-215-6601
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
DIODE,SPECIAL
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10236DAP
HOLDER,TRANSISTOR
NSN, MFG P/N
5961002156715
NSN
5961-00-215-6715
MFG
MILROSS DISTRIBUTION UK LTD
Description
HOLDER,TRANSISTOR
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30-754-518-02
HOLDER,TRANSISTOR
NSN, MFG P/N
5961002156715
NSN
5961-00-215-6715
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
HOLDER,TRANSISTOR
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HOLDER,TRANSISTOR
NSN, MFG P/N
5961002156716
NSN
5961-00-215-6716
MFG
GE AVIATION BISHOPS CLEEVE CHELTENHAM
Description
HOLDER,TRANSISTOR
