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5961-00-152-7302
20 Products
578R595H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527302
NSN
5961-00-152-7302
578R595H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527302
NSN
5961-00-152-7302
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 950.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.85 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.35 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GZ01219A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527302
NSN
5961-00-152-7302
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 950.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.85 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.35 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
TD333271
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527302
NSN
5961-00-152-7302
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION AND 950.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.85 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.35 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
48P236142
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527311
NSN
5961-00-152-7311
MFG
HERLEY CHICAGO DBA STEWART WARNER ELECTRONICS
Description
III END ITEM IDENTIFICATION: AGM-69
Related Searches:
1547514
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
1547514
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
352250035362
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
352250035362
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
MFG
THALES NEDERLAND
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
5800583-926210.129
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
5800583-926210.129
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
MFG
EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
5L.5532.003.94
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
5L.5532.003.94
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
MFG
EADS DEUTSCHLAND GMBH -VERTEIDIGUNG UND ZIVILE SYSTEME-
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
720-320003-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
720-320003-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
MFG
XES INC XEROX ENGINEERING SERVICE
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
S25A60
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
S25A60
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
SCBA6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
SCBA6
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
SCBE05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
SCBE05
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
MFG
SEMTECH CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
SE25880-046
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
SE25880-046
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527893
NSN
5961-00-152-7893
MFG
THALES OPTRONICS LIMITED
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.406 INCHES NOMINAL
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
Related Searches:
915859N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527975
NSN
5961-00-152-7975
MFG
THALES UK LIMITED
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MV1650
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527975
NSN
5961-00-152-7975
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MCL1303
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527990
NSN
5961-00-152-7990
MCL1303
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001527990
NSN
5961-00-152-7990
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: MCL1303
III END ITEM IDENTIFICATION: USED ON FSAS EQUIPMENT
MANUFACTURERS CODE: 04713
THE MANUFACTURERS DATA:
Related Searches:
1N4588
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527993
NSN
5961-00-152-7993
MFG
POWEREX INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: KILAUEA CLASS T-AE 26; BOB HOPE CLASS T-AKR 300; SIRIUS CLASS T-AFS 8
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL DIAMETER: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE4936 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UN
Related Searches:
37955
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527993
NSN
5961-00-152-7993
MFG
ENGELHARD CORP SPECIALTY DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: KILAUEA CLASS T-AE 26; BOB HOPE CLASS T-AKR 300; SIRIUS CLASS T-AFS 8
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL DIAMETER: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE4936 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UN
Related Searches:
400D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527993
NSN
5961-00-152-7993
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: KILAUEA CLASS T-AE 26; BOB HOPE CLASS T-AKR 300; SIRIUS CLASS T-AFS 8
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL DIAMETER: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE4936 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UN
Related Searches:
R5100110
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001527993
NSN
5961-00-152-7993
MFG
WESTINGHOUSE ELECTRIC CORP POWER GENERATION-GENERATOR DIV
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: KILAUEA CLASS T-AE 26; BOB HOPE CLASS T-AKR 300; SIRIUS CLASS T-AFS 8
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL DIAMETER: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE4936 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UN
