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5961-00-605-8582
20 Products
C45AX137
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006058582
NSN
5961-00-605-8582
C45AX137
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961006058582
NSN
5961-00-605-8582
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
DESIGN CONTROL REFERENCE: C45AX137
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 03508
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.438 INCHES
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
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ST18133
TRANSISTOR
NSN, MFG P/N
5961006064036
NSN
5961-00-606-4036
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
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8030000370
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961006065237
NSN
5961-00-606-5237
8030000370
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961006065237
NSN
5961-00-606-5237
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
III END ITEM IDENTIFICATION: 03N
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401-0212
TRANSISTOR
NSN, MFG P/N
5961006077209
NSN
5961-00-607-7209
MFG
VOGUE INSTRUMENT CORP
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL HEIGHT: 0.328 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
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DTS-423
TRANSISTOR
NSN, MFG P/N
5961006077209
NSN
5961-00-607-7209
MFG
POWER TECH INC
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL HEIGHT: 0.328 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
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DTS423
TRANSISTOR
NSN, MFG P/N
5961006077209
NSN
5961-00-607-7209
MFG
GENERAL MOTORS CORP DELCO ELECTRONICS DIV
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL HEIGHT: 0.328 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
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SDT423
TRANSISTOR
NSN, MFG P/N
5961006077209
NSN
5961-00-607-7209
MFG
SOLITRON DEVICES INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL HEIGHT: 0.328 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
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628-1631-001
TRANSISTOR
NSN, MFG P/N
5961006077288
NSN
5961-00-607-7288
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ALTERED ITEM: LENGTHENED LEADS AND PREFORMED INSULATOR CAP.; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTE
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JAN2N2219
TRANSISTOR
NSN, MFG P/N
5961006077288
NSN
5961-00-607-7288
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ALTERED ITEM: LENGTHENED LEADS AND PREFORMED INSULATOR CAP.; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTE
Related Searches:
11-05397-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006079739
NSN
5961-00-607-9739
11-05397-00
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961006079739
NSN
5961-00-607-9739
MFG
COMPAQ FEDERAL LLC
Description
DESIGN CONTROL REFERENCE: 11-05397-00
MANUFACTURERS CODE: 15476
OVERALL HEIGHT: 0.375 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.750 INCHES NOMINAL
THE MANUFACTURERS DATA:
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40L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006080501
NSN
5961-00-608-0501
MFG
ST-SEMICON INC
Description
DESIGN CONTROL REFERENCE: 40L
MANUFACTURERS CODE: 51589
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
THE MANUFACTURERS DATA:
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527-57-5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006080501
NSN
5961-00-608-0501
MFG
KOLLMORGEN CORPORATION DBA KOLLMORGEN ELECTRO OPTICAL A DANAHER COMPANY.
Description
DESIGN CONTROL REFERENCE: 40L
MANUFACTURERS CODE: 51589
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
THE MANUFACTURERS DATA:
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353-2006-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006080503
NSN
5961-00-608-0503
353-2006-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006080503
NSN
5961-00-608-0503
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
DESIGN CONTROL REFERENCE: HD2160
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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HD2160
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006080503
NSN
5961-00-608-0503
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: HD2160
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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1N4788
DIODE,CAPACITOR,VOL
NSN, MFG P/N
5961006083330
NSN
5961-00-608-3330
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DIODE,CAPACITOR,VOL
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PC112B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006083451
NSN
5961-00-608-3451
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
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01289035
DIODE,CAPACITOR,VOL
NSN, MFG P/N
5961006083471
NSN
5961-00-608-3471
MFG
THALES SYSTEMES AEROPORTES S.A
Description
DIODE,CAPACITOR,VOL
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PC1168
DIODE,CAPACITOR,VOL
NSN, MFG P/N
5961006083471
NSN
5961-00-608-3471
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DIODE,CAPACITOR,VOL
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2N4044
TRANSISTOR
NSN, MFG P/N
5961006083840
NSN
5961-00-608-3840
MFG
ANALEX CORP
Description
MANUFACTURERS CODE: 99696
MFR SOURCE CONTROLLING REFERENCE: 3045209-118-101
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
3045209-118-101
TRANSISTOR
NSN, MFG P/N
5961006083840
NSN
5961-00-608-3840
MFG
LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS
Description
MANUFACTURERS CODE: 99696
MFR SOURCE CONTROLLING REFERENCE: 3045209-118-101
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
