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5961-00-504-7579
20 Products
1N342
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005047579
NSN
5961-00-504-7579
MFG
ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 0B6S1
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 6010570
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SS2047
TRANSISTOR
NSN, MFG P/N
5961005045134
NSN
5961-00-504-5134
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4150
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/394
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/394 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE
Related Searches:
4004304-05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045450
NSN
5961-00-504-5450
4004304-05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045450
NSN
5961-00-504-5450
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 1.530 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NONSTANDARD POLARITY CATHODE TO CASE,1 PCT TOLERANCE
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
50M10ZR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045450
NSN
5961-00-504-5450
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 1.530 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NONSTANDARD POLARITY CATHODE TO CASE,1 PCT TOLERANCE
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
4004304-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045456
NSN
5961-00-504-5456
4004304-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045456
NSN
5961-00-504-5456
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 1.530 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NONSTANDARD POLARITY CATHODE TO CASE,1 PCT TOLERANCE
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
50M15ZR1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045456
NSN
5961-00-504-5456
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 1.530 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NONSTANDARD POLARITY CATHODE TO CASE,1 PCT TOLERANCE
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
4004304-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045458
NSN
5961-00-504-5458
4004304-03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045458
NSN
5961-00-504-5458
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 1.530 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: STANDARD POLARITY ANODE TO CASE,1 PCT TOLERANCE
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
50M15Z1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045458
NSN
5961-00-504-5458
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL HEIGHT: 1.530 INCHES NOMINAL
OVERALL LENGTH: 0.410 INCHES MAXIMUM
OVERALL WIDTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: STANDARD POLARITY ANODE TO CASE,1 PCT TOLERANCE
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
1N5349A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005045616
NSN
5961-00-504-5616
MFG
INTERSIL CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 1.145 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: AXIAL LEADS 1.000 IN. LENGTH MIN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N277
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005046357
NSN
5961-00-504-6357
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA LAND & SELF PROTECTION SYSTEM DIVISION DIV LAND & SELF PROTECTION SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N301
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005046559
NSN
5961-00-504-6559
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.155 INCHES MAXIMUM
OVERALL LENGTH: 0.255 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1671 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
2075206
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005046559
NSN
5961-00-504-6559
MFG
ITT CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.155 INCHES MAXIMUM
OVERALL LENGTH: 0.255 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1671 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
80249206
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005046559
NSN
5961-00-504-6559
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.155 INCHES MAXIMUM
OVERALL LENGTH: 0.255 INCHES MAXIMUM
OVERALL WIDTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1671 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N212
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005046560
NSN
5961-00-504-6560
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1348 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
8518358
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005046560
NSN
5961-00-504-6560
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1348 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
G231677-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005046560
NSN
5961-00-504-6560
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 19.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1348 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N221
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005046561
NSN
5961-00-504-6561
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1348 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 390.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
925008-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005047042
NSN
5961-00-504-7042
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 35.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
S254G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005047042
NSN
5961-00-504-7042
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 35.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
HD2048
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005047235
NSN
5961-00-504-7235
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: HD2048
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 82577
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
